Improvement of unipolar power device performance using a polarization junction

Nakajima, Akira; Adachi, Kazuhiro; Shimizu, Mitsuaki; Okumura, Hajime

doi:10.1063/1.2372758

Cited by 45 publications

(25 citation statements)

References 8 publications

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“…In previously, we have developed polarization junction (PJ) wafers as platforms of GaN power ICs [12], and demonstrated high-voltage (HV) GaN-based Nch HFETs using the polarization superjunction (PSJ) concept on the platforms [5]. In this study, we demonstrate monolithically integrated GaN-based Nch and Pch HFETs on the PJ platform.…”

Section: Introductionmentioning

confidence: 94%

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Nakajima¹,

Nishizawa²,

Ohashi³

et al. 2014

2014 IEEE 26th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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Monolithic operation of GaN-based P-channel (Pch) and N-channel (Nch) heterojunction field effect transistors (HFETs) are demonstrated for the first time. The Pch and Nch HFETs were fabricated on a polarization junction platform with polarization induced 2D hole gas (2DHG) and 2D electron gas (2DEG). Because of temperature independent densities of the 2DHG and 2DEG, the HFETs can be operated in wide temperature range. Based on a measured 2DHG mobility, footprints of low-voltage Pch HFETs for gate drive applications were estimated by device simulation.

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Section: Introductionmentioning

confidence: 94%

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Nakajima¹,

Nishizawa²,

Ohashi³

et al. 2014

2014 IEEE 26th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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“…Thus, transistor's on‐resistance R ON and withstand voltage V B were conventionally estimated through analyzing Schottky diodes with same drift regions. For example, analysis of devices with superjunctions (SJ) in drift region was carried out by Fujihira and Nakajima and colleagues . The present paper performs quantitative analysis with reference to the method by Nakajima and colleagues and reports results including the case of a single‐period SJ structure.…”

Section: Models For Approximate Quantitative Analysis Of On‐resistancmentioning

confidence: 99%

“…On the other hand, specific resistance of a lateral HSJ structure is expressed as shown below

R_{ON} \cdot A = \frac{2}{q N_{e} μ_{e} E_{normalB}^{2}} \times V_{normalB}^{2} .

…”

Section: Models For Approximate Quantitative Analysis Of On‐resistancmentioning

confidence: 99%

“…In so doing, focus is placed on electron drift region; specifically, the paper examines and evaluates (1) devices with uniform drift region (Uni. devices), (2) devices with superjunctions (SJ), and (3) devices with hetero superjunctions (HSJ) . Particularly, GaAs lateral HSJ devices that were considered unsuitable for high voltage applications are shown to promise excellent characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Possibility of reducing the on‐resistance in 1 kV‐class lateral superjunction power devices based on III‐V semiconductors

Kushida

Sakaki

2019

Elect Comm in Japan

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Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III‐V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product RON·A of their on‐resistance RON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on‐resistance RON·A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of RON·A for HSJ devices can be lower than that of Si‐insulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN‐based HSJ devices but also GaAs‐based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures.

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“…Theoretical and experimental work on this approach has already been published. [16][17][18] Indeed, improvements in V bd have been reported. 17 However, the interplay between 2DHG and 2DEG needs to be investigated in detail.…”

mentioning

confidence: 96%

Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

Hahn

Reuters

Geipel

et al. 2015

Journal of Applied Physics

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GaN-based heterostructure FETs (HFETs) featuring a 2-D electron gas (2DEG) can offer very attractive device performance for power-switching applications. This performance can be assessed by evaluation of the dynamic on-resistance Ron,dyn vs. the breakdown voltage Vbd. In literature, it has been shown that with a high Vbd, Ron,dyn is deteriorated. The impairment of Ron,dyn is mainly driven by electron injection into surface, barrier, and buffer traps. Electron injection itself depends on the electric field which typically peaks at the gate edge towards the drain. A concept suitable to circumvent this issue is the charge-balancing concept which employs a 2-D hole gas (2DHG) on top of the 2DEG allowing for the electric field peak to be suppressed. Furthermore, the 2DEG concentration in the active channel cannot decrease by a change of the surface potential. Hence, beside an improvement in breakdown voltage, also an improvement in dynamic behaviour can be expected. Whereas the first aspect has already been demonstrated, the second one has not been under investigation so far. Hence, in this report, the effect of charge-balancing is iscussed and its impact on the dynamic characteristics of HFETs is evaluated. It will be shown that with appropriate device design, the dynamic behaviour of HFETs can be improved by inserting an additional 2DHG

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Improvement of unipolar power device performance using a polarization junction

Cited by 45 publications

References 8 publications

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Possibility of reducing the on‐resistance in 1 kV‐class lateral superjunction power devices based on III‐V semiconductors

Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

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