Single domain GaAs layers with satisfactory morphology were grown on (100)-oriented Si substrates by heat treatment of the substrates at above 900°C and subsecquent two-step growth at low temperatures of 450°C or below and by conventional growth temperatures. The grown GaAs layers showed a high mobility of 5200 cm2V-1s-1 at room temperature with a carrier density of 1×1016 cm-3.
Good surface morphological single domain GaAs films were successfully grown on a whole area of 2-inch Si(100) substrates by molecular beam epitaxy (MBE). Si substrates were first thermally cleaned at 850°C, 100 Å GaAs buffer layers were then grown at low substrate temperatures and, finally, 1.5 µm GaAs layers were grown at 600°C. It was found that the first thermal cleaning of Si is important in growing single domain GaAs and the growth temperatures of the buffer layer had to be low to get a good morphological surface.
In the growth of GaAs on Si, the effects of the offset angle of the substrate and its direction on the epitaxial layer were studied using spherical Si substrates. The growth was carried out by a low pressure MOCVD system. On the grown layer, milky lines were observed along the [010] and the [001] axis of the substrate. Except for the narrow regions along these milky lines, the grown layer showed a mirror-like surface with a single domain structure. The surface morphology and the etch pit density in the single domain GaAs layer were strongly affected by the offset direction as well as the offset angle of the substrate.
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