Growth of GaAs on Si by MOVCD

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

“…8,14,15 Before the growth, an annealing (1 min-10 min) at high temperature (800 • C-950 • C) under H 2 is added to promote structuring of the 2 × 1 surface. [17][18][19][20][21][22][23][24][25][26][27] The Si surface presents mainly double steps (Figure 1(b)) with a width of about 100 nm, and few monoatomic islands remains at the step edges (not clearly visible from the AFM image).…”

“…Hageman et al reported a value of µ e ∼ 5000 cm 2 /V s for homoepitaxial GaAs layer with a comparable doping level. 37 In the eighties, Akiyama et al 14,38 have grown GaAs directly on Si(001) substrates. They claimed that they were able to grow APB-free materials with film thickness about 3 µm and that they obtained a mobility of 5200 cm 2 /V s. This mobility decreases to 2000 cm 2 /V s in presence of APB showing their detrimental effect.…”

“…Anti-phase boundaries (APBs) come from polar material (III-V) epitaxy on non-polar material (silicon). This hurdle has been tackled by using Si(001) substrates with a misorientation of 4 • -6 • towards the [110] direction 14,15 or Si(211) substrates. 1 Antiphase boundaries are charged structural defects in polar a Author to whom correspondence should be addressed.…”

Dislocation filters in GaAs on Si

“…), if a thick epitaxial GaAs layer is fully relaxed during growth at a high temperature it cracks during cooling [1,4]. The solution is to use a thin epitaxial layer, since there is a critical thickness for cracking of epitaxial layers [5].…”

“…Perhaps the most widely studied system is GaAs on Si [1], which was the subject of intense work in the 1980s [2] but failed to become commercially viable. There are two main problems in this materials system; thermal expansion mismatch [3], and high TD density .…”