Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Abstract

Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

“…APBs are electrically charged planar defects, acting as non-radiative recombination centers in optoelectronic devices and leakage paths in electronic devices. The impact of APBs on the optical properties of III-V layers is often characterized by photoluminescence quenching and spectral broadening [28,29], while their role on electrical properties is relected in the significantly degraded electron mobilities [29,30]. With certain growth or etching conditions, APBs rising to the material surface could be visible under scanning electron microscopy (SEM) or atomic force microscopy (AFM).…”

“…However, except for nearly lattice-matched GaP on Si [5], conventional hetero-epitaxy on planar Si wafers generally requires a 4°-6°offcut angle in order to form a prominent double-stepped Si surface that prevents APDs. Recently, there has been notable progress made to achieve APB-free III-V epilayers on the so-called "exact" Si (001) substrates by careful treating of (001) Si with a slight misorientation (< 0.5°) prior to III-V nucleation [29]. Fig.…”

Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics

“…The III‐V/Si interface formation plays a crucial role for device performance, since it is the origin for many different defects during growth of a polar III–V film on the non‐polar substrate . In particular, anti‐phase boundaries, which emerge at single‐layer steps at the III‐V/Si(100) heterointerface, need to be suppressed for high‐quality III–V epilayers . Double layer step formation on the Si(100) surface is an essential prerequisite to avoid the formation of anti‐phase domains (APDs) in the III–V film.…”

Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si

“…1,2 The strong demands for using III-V CSs as channel materials have led to platforms such as III-V CS on Si in order to realize cost-effective mass production. [3][4][5] Among the many experimental approaches, [6][7][8][9][10] wafer bonding and epitaxial lift-off (ELO) techniques have been preferred for accomplishing III-V CSs on Si. 6,7 Contrary to the direct epitaxial growth of III-V CSs on a lattice mismatched Si substrate, 8,9 a high-quality III-V channel is guaranteed by transferring the III-V CS layer from a lattice-matched III-V donor substrate to the Si, regardless of the lattice constant difference.…”

“…[3][4][5] Among the many experimental approaches, [6][7][8][9][10] wafer bonding and epitaxial lift-off (ELO) techniques have been preferred for accomplishing III-V CSs on Si. 6,7 Contrary to the direct epitaxial growth of III-V CSs on a lattice mismatched Si substrate, 8,9 a high-quality III-V channel is guaranteed by transferring the III-V CS layer from a lattice-matched III-V donor substrate to the Si, regardless of the lattice constant difference. 6,7,10 Furthermore, an ultra-thin-body (UTB) III-V channel on Si can be simply fabricated and easily applied for vertical 3D stacking by just repeating the subsequent layer transfer.…”