Growth of high quality GaAs layers on Si substrates by MOCVD

Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)

“…GaAs epitaxy on Si was carried out in the standard two-step manner with a low temperature nucleation and high temperature bulk growth to improve crystal quality [21,22]. The precursors for Ga and As were trimethylgallium (TMGa) and tertiarybutylarsine (TBAs), respectively.…”

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

“…8,14,15 Before the growth, an annealing (1 min-10 min) at high temperature (800 • C-950 • C) under H 2 is added to promote structuring of the 2 × 1 surface. [17][18][19][20][21][22][23][24][25][26][27] The Si surface presents mainly double steps (Figure 1(b)) with a width of about 100 nm, and few monoatomic islands remains at the step edges (not clearly visible from the AFM image).…”

“…Anti-phase boundaries (APBs) come from polar material (III-V) epitaxy on non-polar material (silicon). This hurdle has been tackled by using Si(001) substrates with a misorientation of 4 • -6 • towards the [110] direction 14,15 or Si(211) substrates. 1 Antiphase boundaries are charged structural defects in polar a Author to whom correspondence should be addressed.…”

Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

“…Otherwise, the influence of dislocation density on the performance of the GaAs-on-Si solar cell has been theoretically analyzed [3], suggesting that the dislocation density of GaAs on Si must be lower than 5 Â 10 5 cm À2 to yield an energy conversion efficiency that is equivalent to those of GaAs-on-GaAs and InP-on-InP solar cells. Numerous approaches, including two-step growth [4][5][6][7], thermal cycle annealing [8], strained-layer superlattices [9][10][11][12], strained short-period superlattices [13,14] or graded InGaAs single interlayer [15] have been reported to yield the dislocation density of GaAs on Si as low as 10 5 cm À2 . In particular, a special growth technique of epitaxial lateral overgrowth combining molecular beam epitaxy or metal-organic vapor phase epitaxy (MOVPE) with liquid-phase epitaxy was even possibly to achieve a GaAs epilayer free of dislocations [16,17].…”