Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate

Ueda, Takashi; Nishi, Seiji; Kawarada, Yoshihiro; Akiyama, Masahiro; Kaminishi, Katsuzo

doi:10.1143/jjap.25.l789

Cited by 80 publications

(9 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Therefore, the total number of ways that the terrace atoms can be distributed within a given sequence is 2) [ (N .. , -n A -n,,) (1) can be interpreted as the contribution of the terrace atoms interspersed among the steps.…”

Section: B Elimination Of Non-1r-bonded Stepsmentioning

confidence: 99%

Steps on (001) silicon surfaces

Aspnes

Ihm

1987

Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena

View full text Add to dashboard Cite

We investigate a topological method of eliminating antiphase domains in zinc-blende semiconductors heteroepitaxially grown on (00 1) Si substrates. Antiphase domains cannot occur if only one of the two atomic species of the polar overlayer bonds directly to the substrate at the heteroepitaxial interface (As, in the case of GaAs on Si) and if atoms from only one of the two inequivalent sublattices of the substrate form the termination boundary [only biatomic (a0l2) steps present]. We show that thermal equilibrium is a necessary and sufficient condition to realize this condition for (001) Si, a result of a 1T-bonded step reconstruction that lowers the relative enthalpy of reconstructed [110] biatomic steps by 0.04 eV per step atom for one type ofbiatomic step, and of correlation, which freezes out the step configuration entropy thereby suppressing the formation of all other types of steps. Our model explains selection rules and dimer orientations observed in infrared absorption, low-energy electron diffraction, and reflection high-energy electron diffraction measurements of vicinal (001) Si surfaces tilted toward (110). For general vicinal surfaces, competition from the non-1T-bonded sides of the atomically flat terraces weakens the thermodynamic driving force. For surfaces tilted toward (100) it vanishes completely, indicating that antiphase-free polar material cannot be grown on these surfaces, in agreement with experiment. If a minimum threshold energy is needed per terrace to form a primitive (00 1 ) surface, then the boundaries between antiphase-free and antiphase-dominated regions for spherically figured surfaces should be parabolic. The minimum energy estimated from the results of Akiyama et aJ. on spherically figured surfaces suggests that terrace-terrace correlations are also important factors in forming the primitive surface.

show abstract

Section: B Elimination Of Non-1r-bonded Stepsmentioning

confidence: 99%

Steps on (001) silicon surfaces

Aspnes

Ihm

1987

Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena

View full text Add to dashboard Cite

show abstract

“…The domains themselves are called antiphase domains (APD) [20,21]. Such APD's were observed in several systems like GaAs/Si [22], Gap /Si [23], GaAsIGe [24].…”

Section: Polar-non Polar Epitaxy and Antiphase Disordermentioning

confidence: 99%

“…Moreover, Akiyarna el a1. [34,22] have performed GaAs growth on lens-shaped Si substrate, which presents a continuum of both directions and magnitude of tilt, and they observed that APB's occur only in a narrow range of tilt direction near an exact [Wl] and [0101 tilt APBs as pointed out by Kroemer [35] might not occur for (21 1) or (1 10) crystallographic orientations. On (211) or (1 10) surfaces the atomic sites of the two sublattices have a different number of back bonds to the Si or Ge substrate (Fig.2).…”

Section: Polar-non Polar Epitaxy and Antiphase Disordermentioning

confidence: 99%

Heteroepitaxy of Covalent Semiconductors : Fundamentals, Growth and Crystal Properties

Freundlich¹

1989

J. Phys. Colloques

View full text Add to dashboard Cite

Resume.-L'associi tion htttrdpitaxiale des semiconducteurs covalents a suscitt un intCr&t croissant durant ce:: dernibres annks et des progrbs importants ont ttC rtalists tant sur le plan fondamental qu'au niveau des rtalisations technologiques. Cet article dtcrit I'influence des pararnCtres tels que I'orientation du-substrat, la configuration des liaisons B I'interface et les Ctapes initialcs de la missance, sur la gCnCration et la propagation dans Ies couches Cpitaxiales de dtfauts tels que les parois d'antiphase et les dislocations. Par ailleurs, le r61e respectif des &arts de parametres des dseaux cristallins et de la difference des coefficients de dilatation thermique dans I'apparition des contraintes rCsiduelles et l'initialisation des dtfauts structuraux sont analyds. Enfin, les tendances el les limites actuelles dans l'hCttro6pitaxie des semiconducteurs covalents sont discutks. Abstract.-Substantial progress has been realized in both the understanding of the nucleation and growth of heteroepitaxial covalent semiconductors and the demonstration of device applications of these technologies. This paper reviews recent progresses concerning the influence of the substrate orientation, interface configuration, and the initial nucleatio~l on the defect generation and control in the epilayers. This includes considerations of the way in which lattice defects such as antiphase boundaries and dislocations are intoduced at the interface and within the deposits. Emphasis is given to the role of lattice misfit and difference in the thermal expansion cocfficicnts in the formation of lattice defects, as well as in the development of lattice strain in the deposits. Finally several new approches for defect control as well as the actual trends and limitations in the heteroepitaxy of covalent semiconductors are discussed.

show abstract

“…В 1986 году сразу несколькими исследовательскими группами было продемонстрировано [6,7], что однодоменные пленки GaAs могут быть выращены на поверхности Si(001) методом эпитаксии (МЛЭ либо МОГФЭ). Необходимым условием для этого является использование подложек, отклоненных на 2−6 угловых градуса к плоскости (111).…”

Section: Introductionunclassified

Молекулярно-лучевая эпитаксия GaSb на вицинальных подложках Si(001): влияние условий зарождения слоев на их структурные и оптические свойства

Петрушков¹,

Путято²,

Васев³

et al. 2022

Физика И Техника Полупроводников

View full text Add to dashboard Cite

GaSb films were grown by molecular beam epitaxy on vicinal Si(001) substrates with miscut angles of 6° to the (111) plane. Films were formed on AlSb(001)/Al/As/Si, AlSb(00-1)/Al/As/Si, GaSb(00-1)/Ga/P/Si and GaSb(001)/P/Ga/Si transition layers. The influence of orientation, composition, and formation conditions of transition layers on the crystal perfection and optical properties of GaSb films was studied. The GaSb film grown on the GaSb(00-1)/Ga/P/Si(001) transition layer has the best structural and optical properties.

show abstract

Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate

Cited by 80 publications

References 8 publications

Steps on (001) silicon surfaces

Steps on (001) silicon surfaces

Heteroepitaxy of Covalent Semiconductors : Fundamentals, Growth and Crystal Properties

Молекулярно-лучевая эпитаксия GaSb на вицинальных подложках Si(001): влияние условий зарождения слоев на их структурные и оптические свойства

Contact Info

Product

Resources

About