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In this paper we present the numerical and experimental results of a design optimization of electromagnetic cantilevers. In particular, a cost-effective technique of evolutionary computing enabling the simultaneous minimization of multiple criteria is applied. A set of optimal solutions are subsequently fabricated and measured. The designed cantilevers are fabricated in arrays, which makes the comparison and measurements of the sensor properties reliable. The microfabrication process, based on the silicon on insulator (SOI) technology, is proposed in order to minimize parasitic phenomena and enable efficient electromagnetic actuation. Measurements on the fabricated prototypes assessed the proposed methodological approach.

Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro-and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm -1 . Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for borondoped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

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