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A new cell-to-cell interference phenomenon has been found beyond sub 40nm node. Unlike capacitive coupling between floating gates, the threshold voltage (V TH ) shift of interfered cell becomes significantly large beyond some V TH of interfering cell. This is due to conduction band distortion near source and drain regions. In NAND Flash, drain and source are not biased directly but influenced by adjacent floating gate (FG) potential in small dimension. We named this new phenomenon Floating-gate Induced Barrier enhancement (FIBE). The model is confirmed by experiment and simulation. To reduce FIBE, asymmetric S/D junction structure and the bias scheme by using variable read voltage are suggested.

This paper reports a high power 60 GHz push–push oscillator fabricated using 0.12 μm GaAs metamorphic high electron‐mobility transistors. By combining high‐power metamorphic high electron mobility transistor (MHEMT) optimized for millimeter‐wave operation and push–push technique, the oscillator achieved 7.4 dBm of output power at 59 GHz with 37 dBc fundamental frequency suppression. To the knowledge of the authors, this is the first monolithic push–push oscillator at V‐band fabricated using MHEMT technology. Also, the 7.4 dBm of output power is the largest for any oscillators based on MHEMT in this frequency range, and compares well to the result obtained from mature GaAs PHEMT technology. The results demonstrate the application of high power MHEMT for cost effective millimeter‐wave commercial applications. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 609–612, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22203