High power 60 GHz push push oscillator using InALAs/InGaAs metamorphic HEMT technology

Abstract

This paper reports a high power 60 GHz push–push oscillator fabricated using 0.12 μm GaAs metamorphic high electron‐mobility transistors. By combining high‐power metamorphic high electron mobility transistor (MHEMT) optimized for millimeter‐wave operation and push–push technique, the oscillator achieved 7.4 dBm of output power at 59 GHz with 37 dBc fundamental frequency suppression. To the knowledge of the authors, this is the first monolithic push–push oscillator at V‐band fabricated using MHEMT technology. Also, the 7.4 dBm of output power is the largest for any oscillators based on MHEMT in this frequency range, and compares well to the result obtained from mature GaAs PHEMT technology. The results demonstrate the application of high power MHEMT for cost effective millimeter‐wave commercial applications. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 609–612, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22203