A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25 dBm with phase noise of 92 dBc/Hz at 100-KHz offset, and 120 dBc/Hz at 1-MHz offset. To the best of our knowledge, this represents the state-of-the-art for GaN VCOs in terms of frequency, output power, and phase noise performance. This work demonstrates the potential for the use of GaN technology for high frequency, high power, and low phase noise frequency sources for military and commercial applications. Index Terms-Gallium nitride, monolithic microwave integrated circuit (MMIC) oscillator, phase noise.
In this paper, we report on the power and noise performance of AlGaN/GaN HEWS in the K (18 -27 GHz) band. At 20 GHz, a record CW output power of 2 W with an associated gain of 8 dB and PAE of 33 % has been achieved on a 8-finger 0.2 pm x 500 pm device. Minimum noise figure of 1.4 dl3 has been achieved on a 0.15 pm x 200 pm device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and LNA applications.
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