AlGaN/GaN HEMTs---operation in the K-band and above

Smorchkova, I.; Wójtowicz, M.; Sandhu, Rajinder; Tsai, R.; Barsky, M.; Namba, C.; Liu, P.-S.; Dia, R.M.; Truong, M.; Ko, Danny Hsu; Wang, J.; Wang, H.; Khan, Asif

doi:10.1109/tmtt.2002.807683

Cited by 30 publications

(10 citation statements)

References 12 publications

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“…Also a minimum noise figure of 0.48 dB at 12 GHz has been achieved for 0.18 lm gate length devices on sapphire substrate [7]. In K-band, 1.5 dB minimum noise figure at 26 GHz has been reported for devices with 0.12 lm gate length [1].…”

Section: Introductionmentioning

confidence: 90%

“…GaN-based high electron mobility transistors (HEMTs) have demonstrated great potentials for high power, high temperature, and high frequency applications because of the unique material properties of III-nitride semiconductors, including large bandgap, strong polarization field, and high electron saturation velocity [1][2][3]. Up to now, most of the efforts on AlGaN/GaN HEMTs research have been focused on power performances in L-Ka band range.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, low noise is an advantage in power operation as it decreases the overall noise of the system. Excellent noise characteristics have been reported in AlGaN/GaN HEMTs recently [1,[4][5][6][7][8]. For example, devices on SiC with a gate length of 0.12 lm showed 0.42 dB minimum noise figure at 8 GHz [6].…”

Section: Introductionmentioning

confidence: 99%

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The impact of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs

Liu

Lee

2007

Solid-State Electronics

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Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

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The impact of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs

Liu

Lee

2007

Solid-State Electronics

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“…Devices fabricated on sapphire substrates have also been characterized and the results show that, when biased in high-efficiency classes, they can be viable candidates for medium-power applications, despite the higher thermal resistivity of sapphire as compared to that of SiC. Although the technology is constantly improving, the characterization shows that the SELEX-SI technology already exhibits a good maturity, with performances comparable to the state of the art [9].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications

Camarchia

Guerrieri

Pirola

et al. 2005

Int J RF and Microwave Comp Aid Eng

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In this work, we present the characterization results for several HEMT GaNbased devices developed by SELEX Sistemi Integrati. Due to the wide band-gap properties of this material, these devices are very well-suited for high-power applications, and must be characterized under strongly nonlinear and high-power conditions. An extensive power characterization of devices fabricated on GaN grown either on SiC or sapphire substrates is carried out, including pulsed I-V, power sweeps, and load-pull measurements in different bias conditions from class A to class B. An active load-pull bench optimized for high-voltage and high-power measurements allows the load-pull characterization to be extended to the whole Smith chart and the optimum loads to be localized, even for devices with almost reactive optimum terminations. The characterization procedure is performed on HEMT devices fabricated with different technologies and different layouts, in order to improve and refine the fabrication methodology and verify the scaling rules and the effects of defects and thermal degradation. SELEX SI devices show a growing maturity, with performances comparable to state-of-the-art technology.

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“…In X band, a power density of 30 W/mm and a power added efficiency of 49% have been demonstrated at 4 GHz [1]. Meanwhile, excellent noise characteristics have been reported in AlGaN/GaN HEMTs [2][3][4][5][6][7]. Specifically, devices on SiC with a gate length of 0.12 µm showed 0.42 dB minimum noise figure (NF min ) at 8 GHz [5].…”

Section: Introductionmentioning

confidence: 99%

Temperature‐dependent microwave noise performances of AlGaN/GaN HEMTs with post‐gate annealing

Liu

Lee

2005

phys. stat. sol. (c)

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PACS 72.70.+m, 73.40.Kp, 85.30.Tv In this paper, we report the temperature dependence of microwave noise performances of AlGaN/GaN high electron mobility transistors (HEMTs) up to 573 K and the influences of post-gate-annealing (PGA) technique on temperature dependant characteristics of HEMTs. From room temperature (R.T.) to 573 K, the maximum current of devices with PGA decreased from 998 mA/mm at R.T. to 478 mA/mm while maximum current of devices without PGA dropped from 848 mA/mm at R.T to 641 mA/mm at 393 K. The gate leakage current of devices with PGA is four orders smaller than that of devices without PGA. For RF performance, the cut-off frequency (fT ) and the maximum frequency of oscillation (fmax) of devices decreased significantly with increasing temperature. In noise measurements, annealed devices exhibited significant improvements in minimum noise figure (NFmin) and associated gains (Ga). Specifically, NFmin and Ga at 10 GHz are measured at different temperatures. At R.T., the devices after PGA showed an NFmin of 1.16 dB that was 0.7 dB lower than the un-annealed devices. At 573 K, the devices with PGA still exhibit excellent characteristics with an NFmin of 3.94 dB and a Ga of 7.02 dB while devices without PGA can only work up to 393 K. To our knowledge, this is the first report of microwave noise performances of AlGaN/GaN HEMTs for substrate temperatures higher than 473 K.

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AlGaN/GaN HEMTs---operation in the K-band and above

Abstract: Index Terms-GaN, high electron-mobility transistor (HEMT), -band, microwave noise, microwave power.

Cited by 30 publications

References 12 publications

The impact of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs

The impact of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs

Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications

Temperature‐dependent microwave noise performances of AlGaN/GaN HEMTs with post‐gate annealing

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