The impact of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs

Liu, Dongmin; Lee, Jaesun; Lu, Wu

doi:10.1016/j.sse.2006.10.007

Cited by 5 publications

(1 citation statement)

References 15 publications

(20 reference statements)

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“…AlGaN/GaN heterostructure field-effect transistors ͑HFETs͒ have great potential as high power, high frequency, and high temperature devices owing to their excellent material characteristics. [1][2][3] Unfortunately, the Schottky gate ͑SG͒ leakage current is a major problem, which can lead to increased subthreshold current, higher power consumption, reduced breakdown voltage, and increased noise figure. An effective way to solve this predicament is by introducing a dielectric layer on the surface of the substrate as the gate insulator to form the metal-insulator-semiconductor ͑MIS͒-HFETs.…”

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confidence: 99%

Improved Electrical Performance and Thermal Stability of HfO[sub 2]/Al[sub 2]O[sub 3] Bilayer over HfO[sub 2] Gate Dielectric AlGaN/GaN MIS–HFETs

Tian

Chor

2010

J. Electrochem. Soc.

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AlGaN/GaN metal–insulator–semiconductor heterostructure field-effect transistors (MIS–HFETs) with a HfO2/Al2normalO3 bilayer gate dielectric have been fabricated, characterized, and compared with HfO2 gate dielectric MIS–HFETs. Physical and electrical characterizations have revealed the enhanced properties of the HfO2/Al2normalO3 bilayer dielectric over that of the single HfO2 layer. As a result, the fabricated HfO2/Al2normalO3 MIS–HFETs exhibit better electrical performance and thermal stability than the HfO2 transistors. The maximum drain current of the HfO2/Al2normalO3 MIS–HFETs has increased by ∼8.5% , while the off-state drain current has reduced by nearly 1 order of magnitude than that of the HfO2 MIS–HFETs. After the thermal stress at elevated temperatures (400 and 500°C ) for a prolonged duration up to 500 min, the irreversible device performance degradation, including drain current, peak transconductance, threshold voltage, and gate leakage current for the HfO2/Al2normalO3 MIS–HFETs, is substantially less than that for the HfO2 MIS–HFETs. A longer lifetime of ∼4×106h at 150°C has also been estimated for the former, compared to that of the latter of ∼2×105h .

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confidence: 99%