Source access impedance model for AlGaN/GaN HEMTs

Xu, Yuehang; Guo, Yujie; Wu, Yunqiu; Xu, Ruimin; Yan, Bo; Wang, Lin

doi:10.1049/el.2009.1573

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2015

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“…AlGaN/GaN monolithic microwave integrated circuit (MMIC) has entered a stage of application internationally [1][2][3][4], whose products have reached a maximum operation frequency of W-band [5]. A wideband and accurate small-signal model is the foundation of large-signal modeling in bottom-up method [6][7][8][9][10][11][12] and can also be used to build noise models [13][14][15][16][17], which makes small-signal modeling of great significance to the development and application of GaN MMIC.…”

Section: Introductionmentioning

confidence: 99%

An efficient parameter extraction method for GaN HEMT small‐signal equivalent circuit model

Wen

Wang

et al. 2015

Int J Numerical Modelling

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This paper proposes an efficient parameter extraction algorithm for GaN high electron mobility transistors smallsignal equivalent circuit model. The algorithm combines parameter scanning and iteration methods to solve the problem of error accumulation in conventional methods and is implemented in MATLAB programming. By using the iteration method, the algorithm each time uses more accurate element values thus makes the results converge to the optimal value faster. A 20-element small-signal equivalent circuit model of GaN high electron mobility transistors is used to validate the proposed algorithm, and the results show that the calculated S-parameters agree well with the measured S-parameters within the frequency range of 0.1 to 40 GHz.

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