Epitaxial films of La2/3Ca1/3MnO3 were successively implanted with 100 and 200 keV silver ions at fluences of 4.5×1015 and 1×1016 ions/cm2, respectively, to achieve a fairly uniform implant distribution. The as-implanted films are insulating and do not show a metal–insulator transition. Postimplantation annealing at 950 °C shows a recovery of the high structural quality of the films, along with an increase in the metal–insulator transition temperature (Tp), magnetoresistance, and the peak temperature coefficient of resistance (TCR) at the transition. The peak TCR of 23% for manganite films is clearly significant for bolometric applications.
Pulsed laser induced reactive quenching at a liquid–solid interface was used for the synthesis of tetrahedrally coordinated crystalline carbon nitride on a tungsten substrate. The crystalline phase was identified by transmission electron diffraction. X-ray photoelectron spectroscopy indicated that the carbon atoms are coordinated only tetrahedrally with nitrogen—as expected for C3N4. The atomic percentage of N (considering only those atoms coordinated with C) is about 35%.
Dynamic scaling behavior of the droplet size distribution in the coalescence regime for growth by pulsed laser deposition is studied experimentally and by computer simulation, and the same is compared with that for continuous vapor deposition. The scaling exponent for pulsed deposition is found to be (1.2 +/- 0.1), which is significantly lower as compared to that for continuous deposition (1.6 +/- 0.1). Simulations reveal that this dramatic difference can be traced to the large fraction of multiple droplet coalescence under pulsed vapor delivery. A possible role of the differing diffusion fields in the two cases is also suggested.
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