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The growth of epitaxial InBi x Sb ð1ÀxÞ (x ¼ 4 atomic %) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy, as a result of optimizing several growth parameters such as III/V mass ratio, growth temperature, cooling rate, etc. Scanning electron micrograph shows sharp interface even at 1 mm resolution. The grown films are n-type in the entire temperature range. The typical value of the carrier density is 9:2 Â 10 16 /cm 3 and the Hall mobility is 3:54 Â 10 4 cm 2 /V s at 300 K. The room temperature band gap has been found to be in the range of 0.134-0.140 eV. These results indicate that the grown films are comparable to those grown by other sophisticated techniques in terms of structural, optical and electrical properties. r

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