Growth of InBixSb(1−x) films on GaAs(001) substrates using liquid phase epitaxy and their characterization

Abstract

The growth of epitaxial InBi x Sb ð1ÀxÞ (x ¼ 4 atomic %) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy, as a result of optimizing several growth parameters such as III/V mass ratio, growth temperature, cooling rate, etc. Scanning electron micrograph shows sharp interface even at 1 mm resolution. The grown films are n-type in the entire temperature range. The typical value of the carrier density is 9:2 Â 10 16 /cm 3 and the Hall mobility is 3:54 Â 10 4 cm 2 /V s at 300 K. The room temperature band gap has been found to be in the range of 0.134-0.140 eV. These results indicate that the grown films are comparable to those grown by other sophisticated techniques in terms of structural, optical and electrical properties. r

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

“…The bandgap of InSbBi film is confirmed to shift to long wavelengths with Bi content by measuring photovoltaic response of a p-n junction. The bandgap reduction determined by optical absorption measurements is about ∼35 meV/% Bi [181]. InSbBi is also grown by MOCVD [24,29,182].…”

“…For example, Iwanowski et al [28] grew InSbBi layers by LPE with a Bi content of 0.5%. Dixit et al [181] reported growth of InSbBi with a Bi content up to 4% by LPE on GaAs substrates.…”

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

“…Contrary to the behavior of bulk InSb [18], the carrier mobility does not increase with the measurement temperature. This anomaly in temperature-dependent electron mobility has been observed in InSb layers grown on GaAs substrate [19][20][21] and in InSb 1−x Bi x grown on GaAs substrate [7]. This behavior can be attributed to the effect of dislocations near the InSb/GaAs interface.…”

“…growth temperature of 360 • C-380 • C and V/III ratio of about 1.2-1.5. However, we found that equation (7) is not able to fully describe the transition from n-to p-type conductivity as shown in figures 3(a) and (b). It is likely that the dislocation and point defects formed under such low growth temperature have resulted in a dislocation type donor concentration, N D,dis and a background donor concentration, N D,bkg .…”

“…Their carrier concentration and electron mobility were reported as 2.7 × 10 17 cm −3 and ∼1.0 × 10 4 cm 2 V•s −1 , respectively. Another study reported slightly lower level of electron concentration but higher carrier mobility (9.2 × 10 16 cm −3 and 3.54 × 10 4 cm 2 V•s −1 , respectively) for InSb 1−x Bi x with a Bi content of 4% grown using liquid phase epitaxy (LPE) with normal lattice expansion [7]. These reports do not provide sufficient practical guide and up to date material parameters for device designers, especially considering the recent development of new epilayer buffer technology for growing lattice mismatch layer on GaAs and Si has been developed recently.…”