Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang, Limin; Zhang, Liyao; Li, Yue; Liang, Dan; Chen, Xiren; Li, Yaoyao; Lu, Pengfei; Shao, Jianda; Wang, Shumin

doi:10.3390/cryst7030063

Cited by 78 publications

(50 citation statements)

References 274 publications

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“…AFM was measured in tapping mode with a Veeco Dimension 3100 microscope. GaSbBi [22,31] as well as GaAsBi [28,32,33], and here are ascribed to the insufficient Sb/Ga ratio. As the Sb/Ga flux ratio is increased over the wafer, the size and density of the droplets decrease, to a point that a droplet-free surface is formed, i.e.…”

Section: Methodsmentioning

confidence: 70%

Epitaxial phases of high Bi content GaSbBi alloys

Hilska

Koivusalo

Puustinen

et al. 2019

Journal of Crystal Growth

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GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. The fundamental understanding of the epitaxial process required to demonstrate high quality crystals is in an early-developmental phase. From this perspective, we report on the key role played by the Sb/Ga flux ratio in controlling the structural quality and incorporation of high Bi content (up to 14.5 %-Bi), revealing three distinct epitaxial phases. The first phase (below stoichiometric Sb/Ga) exhibits Ga-Bi compound droplets, low crystal quality, and reduced Bi content. At the second phase (above stoichiometric Sb/Ga), the crystal exhibits smooth surfaces and excellent crystallinity with efficient Bi incorporation. The last phase corresponds to exceeding a Sb/Ga threshold that leads to reduced Bi incorporation, Bi droplets and degraded crystallinity. This threshold value that defines the optimal growth window is controlled by the temperature as well as the Bi/Ga ratio. Increasing temperature increases the threshold, albeit simultaneously reducing Bi incorporation. Conversely, increasing the Bi/Ga flux ratio increases Bi incorporation, while narrowing down and ultimately closing the window. This study provides a general framework enabling development of high quality GaSbBi heterostructures for emerging mid-infrared optoelectronics.

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Section: Methodsmentioning

confidence: 70%

Epitaxial phases of high Bi content GaSbBi alloys

Hilska

Koivusalo

Puustinen

et al. 2019

Journal of Crystal Growth

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“…Note that scientists have different points of view about it. Some argue that doping of Bi during the QD growth process by MBE [17–18 20] and metal-organic vapor-phase epitaxy (MOVPE) [32–33] reduces the In adatom diffusion length and prevents the coalescence of InAs QDs. Then, the QD array density increases.…”

Section: Resultsmentioning

confidence: 99%

“…In this work, it is proposed to use GaAsBi. Bismuth is an isovalent doping and forms ternary, quaternary and quinary solid solutions with III–V compounds [18,32–38]. Bi incorporation into GaAs makes it possible to change the lattice mismatches.…”

Section: Introductionmentioning

confidence: 99%

“…The GaAs energy band diagram varies greatly due to the large size of Bi atoms. Emerging strains in the GaAsBi layer should have an influence on the surface density and sizes of InAs QDs and also on the photoluminescence properties of InAs/GaAs heterostructures [17–18 20,32–33]. In this regard, a study of the influence of Bi on the optical properties of InAs/GaAs heterostructures is an actual requirement.…”

Section: Introductionmentioning

confidence: 99%

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Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

Pashchenko

Lunin

Danilina

et al. 2018

Beilstein J. Nanotechnol.

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This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin GaAs barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/GaAs heterostructures. An increase in the thickness of the GaAs barrier layers was accompanied by a blue shift of the photoluminescence peak. The effect of isovalent Bi doping of the GaAs barrier layers on the structural and optical properties of the InAs/GaAs heterostructures was investigated. It was found that the Bi content up to 4.96 atom % in GaAs decreases the density of InAs quantum dots from 1.53 × 1010 to 0.93 × 1010 cm−2. In addition, the average lateral size of the InAs quantum dots increased from 14 to 20 nm, due to an increase in the surface diffusion of In. It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV.

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“…Incorporating a small amount of Bi into III-Vs can efficiently reduce the bandgap energy (88 meV/Bi% for GaAs 1-x Bi x ) resulting from the anti-crossing of the Bi impurity band with the GaAs valence band. 1 As the fraction of Bi in GaAsBi is up to 9%, the bandgap reaches 800 meV which matches up with 1.55 µm wavelength division multiplexing telecommunication systems. 2 The incorporation of Bi will increase the spin-orbit split energy, which will be larger than the bandgap when the Bi composition in GaAsBi is approximately up to 10%.…”

Section: Introductionmentioning

confidence: 83%

Electrically injected GaAsBi/GaAs single quantum well laser diodes

Liu

Pan

et al. 2017

AIP Advances

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We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm -1 and transparency current density of 196 A/cm 2 . The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77∼150 K, and reduced to 90 K in the range of 150∼273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77∼273 K.

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Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Cited by 78 publications

References 274 publications

Epitaxial phases of high Bi content GaSbBi alloys

Epitaxial phases of high Bi content GaSbBi alloys

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

Electrically injected GaAsBi/GaAs single quantum well laser diodes

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