Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for films having different thickness. The resulting films are polycrystalline and show ≈ 90 % transmission in the visible region. Hall effect measurements at room temperature for a film with a nominal thickness of ≈ 350 nm shows a relatively high carrier concentration ≈ 6.3 × 10 20 cm −3 , mobility ≈16 cm 2 V −1 s −1 , with a low resistivity ≈ 1.01×10 −3 Ω cm.

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