Electrical conductivity tuning and valence band splitting studies in Copper Gallium Selenide thin films

Abraham, Anitha; Keerthi, K.; Shaji, Sadasivan; Deshpande, Uday; Philip, Rachel Reena

doi:10.1016/j.jallcom.2017.09.176

Cited by 3 publications

(2 citation statements)

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“…The bandgap value is influenced by the material's composition, stoichiometry, and any intentional doping or alloying. It is possible to adjust the bandgap to maximise sunlight absorption by adjusting the copper, gallium, and selenium ratio [11]. Copper gallium selenide (CuGaSe 2 , CGS), one of these compounds, has an energy gap of 1.68 eV at ambient temperature and is anticipated to be a potential component for red-light emitting devices [10].…”

Section: Introductionmentioning

confidence: 99%

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Absorber layer improvement and performance analysis of CIGS thin-film solar cell

Khamis,

Rodzi,

Naharuddin

2024

JOR

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CIGS has shown significant potential for cost-effective and efficient photovoltaic applications, with efficiency often exceeding 20%. However, further improvements in cell performance are needed to reduce production costs. Thus, this study proposes an ultra-thin structure for CIGS solar cells by modifying the absorber layer thickness and composition. SCAPS software was used to evaluate the performance of the proposed design, such as open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF%), and conversion efficiency (ŋ%). Results showed that ultra-thin solar cells with the proposed GnP and CGS absorber layers are ideal due to their greater ŋ%, 25.33%.

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Section: Introductionmentioning

confidence: 99%

“…In its pure form, CGS is a p-type semiconductor, meaning that positive charge carriers (holes) dominate and permit electrical conduction [12]. The electrical conductivity of CGS is greatly influenced by the concentration of these holes and their mobility inside the material [11].…”

Section: Introductionmentioning

confidence: 99%