FeSe thin films were prepared on GaAs(100) substrate by the selenization of Fe films using molecular-beam epitaxy. FeSe compound thin films were obtained at a substrate temperature above 380 °C. From the depth profiles of Fe and Se in the selenized film measured by Auger electron spectroscopy, it was confirmed that an FeSe layer with a constant ratio of Fe/Se was formed. The measured composition ratio of Fe/Se in the film was 1/3. It was different from the composition in Fe3Se4 or Fe7Se8, which is a stable bulk FeSe compound. From the measured M–H curve, it was found that the obtained FeSe film consisted of two phases with different magnetic properties.

A thin film of Pb(Mg1/3Nb2/3)O3 was prepared by the sol-gel method using metal alkoxides. The X-ray analysis indicated that the perovskite phase was formed by sintering at over 600°C. The orientation and the crystallization rate were greatly influenced by the type of substrate and sintering conditions.

Fe x Se y films were prepared on GaAs(001) substrates by a selenization of Fe films using molecular beam epitaxy equipment. Structural and magnetic properties of FexSey thin films during their selenization process were studied. The selenized films obtained consisted of polycrystalline grains of 100–700 nm. A magnetic anisotropy of in-plane/perpendicular to the films was weakened by increasing the selenization ratio of the samples, which was interesting in contrast to the fact that the grain size of the films became larger.

Highly oriented Pb(Mg1/3Nb2/3)O3 films prepared by the sol-gel method were studied with high resolution electron microscopy. The lattice image reveals epitaxial growth at the interface between the perovskite crystal and MgO single crystal substrate. A short-range ordered structure is ascertained to exist in the perovskite grains in the film.

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