1991
DOI: 10.1143/jjap.30.l1052
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High-Resolution Electron Microscopy on Epitaxial Pb(Mg1/3Nb2/3)O3 Film Prepared by Sol-Gel Method

Abstract: Highly oriented Pb(Mg1/3Nb2/3)O3 films prepared by the sol-gel method were studied with high resolution electron microscopy. The lattice image reveals epitaxial growth at the interface between the perovskite crystal and MgO single crystal substrate. A short-range ordered structure is ascertained to exist in the perovskite grains in the film.

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Cited by 20 publications
(4 citation statements)
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“…lowest activation energies for vaporization~Sata, 1992!. In studies related to thin films and based on lead-based perovskites, it has been observed that the $100% faces have the lowest surface energies~Okuwada et al., 1989, 1991Tani et al, 1993!. This is valid also for SrTiO 3~S ano et al, 2003!.…”
Section: Discussionmentioning
confidence: 74%
“…lowest activation energies for vaporization~Sata, 1992!. In studies related to thin films and based on lead-based perovskites, it has been observed that the $100% faces have the lowest surface energies~Okuwada et al., 1989, 1991Tani et al, 1993!. This is valid also for SrTiO 3~S ano et al, 2003!.…”
Section: Discussionmentioning
confidence: 74%
“…Preferred orientations have been reported for the sol-gel method on lattice matched SrTiO 3 and MgO single crystal substrates 3 ,4 and some were confirmed to be epitaxial by TEM. 5 In addition, preferred orientations were reported for perovskite thin layers deposited on polycrystalline Pt. 6,7, 8 (111) and (100) orientations can develop on a commonly used multilayer substrate, Pt/Ti/SiO2/Si, where the face-centered Pt layer has a self-textured (111) orientation.…”
Section: Introductionmentioning
confidence: 99%
“…Transmission electron microscopy ͑TEM͒ investigations have confirmed the existence of 1:1 ordered nanodomains in a disordered matrix in PMN films. 12 The electron diffraction 16 and Raman spectroscopy 17 also indicated that the microstructures of the films are similar to those of the bulks. Therefore the model Hamiltonian previously proposed 3 to describe the dielectric response process in relaxor ferroelectrics should be also valid for relaxor ferroelectric thin films.…”
Section: Methodsmentioning
confidence: 93%