Preferred Orientations for Sol-Gel Derived Plzt Thin Layers

Tani, Toshihiko; Xu, Zhengkui; Payne, David A.

doi:10.1557/proc-310-269

Cited by 130 publications

(66 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…3) was in the order of 5¥10 SIMS showed that the Pt electrodes on the Ti adhesion layers contained Ti, consistent with findings by others [18][19][20]. The influence of Ti underneath (111) textured Pt electrodes on perovskite film texture is well documented [21,22]. For example, Tani et al reported a change from (100) to (111) texture in Pb(Zr,Ti)O 3 thin films, if Ti from the adhesion layer migrated to the electrode surface [22].…”

Section: A Srtio 3 Thin Film Microstructuresupporting

confidence: 86%

“…The influence of Ti underneath (111) textured Pt electrodes on perovskite film texture is well documented [21,22]. For example, Tani et al reported a change from (100) to (111) texture in Pb(Zr,Ti)O 3 thin films, if Ti from the adhesion layer migrated to the electrode surface [22]. Further studies are necessary to identify the mechanism that induced 8 such a strong preference for (111) SrTiO 3 film texture.…”

Section: A Srtio 3 Thin Film Microstructurementioning

confidence: 99%

See 1 more Smart Citation

Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes

Schmidt

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

The factors controlling low frequency (1 MHz) dielectric losses of textured SrTiO 3 thin films deposited by radio-frequency magnetron sputtering on platinized sapphire substrates were investigated. In particular, the influence of film texture, phase transformations, applied bias field, temperature and annealing atmospheres was studied. Films that were (111) textured showed a phase transformation at ~ 150 K, whereas films that were predominantly (110) oriented did not exhibit a phase transformation in the measured temperature range (100 K -300 K). Two major contributions to the dielectric losses were identified: a low temperature loss increase for the (111) oriented film, which could be suppressed by an applied bias field, and a loss peak at 2 50 K (at 1 MHz), which was strongly frequency dependent and likely associated with a relaxing defect. The low temperature loss mode was related to the appearance of a phase transformation and contributed to the dielectric losses even at temperatures that were more than 100 K above the phase transformation. In contrast to the leakage properties of the films, which were strongly dependent on annealing atmospheres, annealing under reducing conditions had no significant influence on any of the observed loss modes. Possible origins of the different loss contributions are discussed.3

show abstract

Section: A Srtio 3 Thin Film Microstructuresupporting

confidence: 86%

Section: A Srtio 3 Thin Film Microstructurementioning

confidence: 99%

Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes

Schmidt

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The seeding mechanism described above has not been proposed before. Previous work performed with sol-gel deposition techniques attributed the (111) nucleation to transient phases of either a Pt-Pb alloy [30] or a Pt-Ti alloy [31], which form only in strong reducing conditions. This is not the case in our sputter experiment and can therefore be excluded.…”

Section: Surface Energies and Orientational Effects In Pbtio 3 Film Gmentioning

confidence: 99%

Texture control of PbTiO3 and Pb(Zr,Ti)O3 thin films with TiO2 seeding

Muralt

Maeder

Sagalowicz

et al. 1998

Journal of Applied Physics

264

131

View full text Add to dashboard Cite

The nature and the role of 1 to 5 nm thick TiO 2 seed layers for the growth of textured PbTiO 3 and Pb(Zr,Ti)O 3 thin films on textured Pt(111) thin film substrates have been studied. Under otherwise identical in situ sputter deposition process conditions, the PbTiO 3 texture could be turned from (100) to (111) orientation by adding the seed layer. This is demonstrated by patterning the TiO 2 film. Auger electron spectroscopy and x-ray photoemission spectroscopy showed that the seed layer was a continuous TiO 2 film. X-ray photoelectron diffraction measurements revealed epitaxial ordering in the seed layer. As there is no azimuthal order among the Pt grains, the reduced information of azimuthally averaged polar cuts is obtained. These give strong evidence for a strained rutile (110) structure. Various deposition experiments indicated that the TiO 2 is effective only when it is ordered before the PbTiO 3 nucleation starts. The epitaxial relationship between PbTiO 3 (111) and Pt(111) is thus mediated by the intermediate, epitaxial TiO 2 film, which is dissolved or transformed to PbTiO 3 afterwards. The observed growth behavior is discussed in terms of surface and interface energies.

show abstract

“…If no Ti layer was present, the SrTiO 3 thin films were predominantly (110) oriented, although they also showed an epitaxial relationship with the (111) Pt electrode [12]. Ti adhesion or surface layers have also been shown to promote epitaxial growth on (111) Pt grains for other perovskite films [14][15][16][17].…”

mentioning

confidence: 99%

“…In the literature, it has been suggested that either a Pt-Ti intermetallic or TiO 2 on the Pt surface provide a templating layer for (111) epitaxial perovskite growth [14,17].…”

mentioning

confidence: 99%

Atomic structure of (111) SrTiO3∕Pt interfaces

Schmidt

Klenov

Keane

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

Atomic resolution high-angle annular dark field (HAADF) imaging in scanning transmission electron microscopy was used to investigate the interface atomic structure of epitaxial, (111) oriented SrTiO3 films on epitaxial Pt electrodes grown on (0001) sapphire. The cube-on-cube orientation relationship of SrTiO3 on Pt was promoted by the use of a Ti adhesion layer underneath the Pt electrode. While a Ti-rich Pt surface was observed before SrTiO3 growth, HAADF images showed an atomically abrupt SrTiO3∕Pt interface with no interfacial layers. The SrTiO3 films contained two twin variants that were related by a 180° rotation about the ⟨111⟩ surface normal. HAADF images showed two different interface atomic arrangements for the two twins. The role of Ti in promoting (111) epitaxy and the implications for the dielectric properties are discussed.

show abstract

Preferred Orientations for Sol-Gel Derived Plzt Thin Layers

Cited by 130 publications

References 13 publications

Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes

Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes

Texture control of PbTiO3 and Pb(Zr,Ti)O3 thin films with TiO2 seeding

Atomic structure of (111) SrTiO3∕Pt interfaces

Contact Info

Product

Resources

About