1989
DOI: 10.1143/jjap.28.l1271
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Preparation of Pb(Mg1/3Nb2/3)O3 Thin Film by Sol-Gel Method

Abstract: A thin film of Pb(Mg1/3Nb2/3)O3 was prepared by the sol-gel method using metal alkoxides. The X-ray analysis indicated that the perovskite phase was formed by sintering at over 600°C. The orientation and the crystallization rate were greatly influenced by the type of substrate and sintering conditions.

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Cited by 52 publications
(9 citation statements)
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“…1,˛1 1 1 of 550 • C RTA-treated PMN-PT film was about 92%; after being annealed at 650 • C and 750 • C,˛1 1 1 changed from 82% to 80%, revealing the highly (1 1 1)-textured structure in film when deposited on platinized silicon substrate. It was reported that the (1 1 1)-oriented PMN film was preferentially formed due to low interfacial energy, which resulted from the fact that the lattice parameters of Pt(1 1 1) matched closely with those of PMN(1 1 1) [17]. We investigate more precisely the structure of our films by magnifying y-scale in Fig.…”
Section: Resultsmentioning
confidence: 97%
“…1,˛1 1 1 of 550 • C RTA-treated PMN-PT film was about 92%; after being annealed at 650 • C and 750 • C,˛1 1 1 changed from 82% to 80%, revealing the highly (1 1 1)-textured structure in film when deposited on platinized silicon substrate. It was reported that the (1 1 1)-oriented PMN film was preferentially formed due to low interfacial energy, which resulted from the fact that the lattice parameters of Pt(1 1 1) matched closely with those of PMN(1 1 1) [17]. We investigate more precisely the structure of our films by magnifying y-scale in Fig.…”
Section: Resultsmentioning
confidence: 97%
“…After hydrolyzation, the samples were heated at 350°C for 30 min, then rapid thermally annealed at a prescribed temperature for 2 h. The details of the thin film preparation can be found in Ref. (19).…”
Section: Methodsmentioning
confidence: 99%
“…Therefore, a (100) plane is preferred in non-epitaxial textured growth, and was observed in the present work whenever PLZT thin layers were crystallized on unannealed A-and C-type substrates. Wu et al' 6 reported highly (100) oriented sputter-deposited PLZT thin layers on amorphous SiO 2 . This type of growth -off a featureless amorphous surface -can be attributed to the minimum energy F-face model.…”
Section: Characterization Of Plzt Thin Lyrmentioning
confidence: 99%
“…6,7, 8 (111) and (100) orientations can develop on a commonly used multilayer substrate, Pt/Ti/SiO2/Si, where the face-centered Pt layer has a self-textured (111) orientation. Okuwada et al 6 reported a strong dependence of preferred orientation on heating rate for lead magnesium niobate (PMN), i.e., (11l) at slow heating rates and (100) at faster heating rates. Spierings et al 8 reported that PZT layers could develop with preferred (100) orientation on as-prepared Pt/TiSiO2/Si substrates whereas (100) and (111) orientations developed on annealed substrates.…”
Section: Introductionmentioning
confidence: 99%