2010
DOI: 10.1016/j.jallcom.2010.01.109
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Highly (111)-oriented and pyrochlore-free PMN–PT thin films derived from a modified sol–gel process

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Cited by 21 publications
(12 citation statements)
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“…That could explain a larger P r is achieved for sample A. The values of P r of the films with well-saturated P-E Loops are close to those previously reported on PMN-PT films in the literatures (11-15 C/cm 2 ) [13,25,26], while they are lower than those of in their bulk counterparts, which suggests very little contribution from the displacement of non-180 • domain when the clamping imposed by the substrates [27]. The other important factor that should be considered is residual stress in the films, it has been well recognized that the remnant polarization of a ferroelectric thin film is a function of stress, and tensile stress leads to a lower remnant polarization confirmed by XRD results as shown in Fig.…”
Section: Resultssupporting
confidence: 89%
“…That could explain a larger P r is achieved for sample A. The values of P r of the films with well-saturated P-E Loops are close to those previously reported on PMN-PT films in the literatures (11-15 C/cm 2 ) [13,25,26], while they are lower than those of in their bulk counterparts, which suggests very little contribution from the displacement of non-180 • domain when the clamping imposed by the substrates [27]. The other important factor that should be considered is residual stress in the films, it has been well recognized that the remnant polarization of a ferroelectric thin film is a function of stress, and tensile stress leads to a lower remnant polarization confirmed by XRD results as shown in Fig.…”
Section: Resultssupporting
confidence: 89%
“…The use of silicon substrates with Pt as the bottom electrodes (Pt/Ti/SiO 2 /Si) is common because of the good metallic properties and high oxidation resistance of Pt metal [1]. The epitaxial films are expected to exhibit improved properties compared to their randomly oriented polycrystalline film counterparts [2].…”
Section: Introductionmentioning
confidence: 99%
“…Various deposition techniques such as solution-gelation [1], sputtering [4], electrophoretic deposition (EPD) [10], and pulse laser deposition (PLD) [5] have been used for the growth of PMN-PT thin films. PLD has emerged as an appropriate technique for obtaining films with a desired stoichiometry without post-deposition thermal treatment.…”
Section: Introductionmentioning
confidence: 99%
“…However, PMN-PT films on noble metal electrodes like Pt exhibit significant fatigue after the long bipolar switching pulses used in memory application. To overcome this fatigue problem in PMN-PT, metallic oxide electrodes such as La 0.5 Sr 0.5 CoO 3 (LSCO) [2], SrRuO 3 (SRO) [3], and LaNiO 3 (LNO) [4], replacing the noble metal electrodes like Pt [5], are thought to be one possible solution.…”
Section: Introductionmentioning
confidence: 99%