FeSe thin films were prepared on GaAs(100) substrate by the selenization of Fe films using molecular-beam epitaxy. FeSe compound thin films were obtained at a substrate temperature above 380 °C. From the depth profiles of Fe and Se in the selenized film measured by Auger electron spectroscopy, it was confirmed that an FeSe layer with a constant ratio of Fe/Se was formed. The measured composition ratio of Fe/Se in the film was 1/3. It was different from the composition in Fe3Se4 or Fe7Se8, which is a stable bulk FeSe compound. From the measured M–H curve, it was found that the obtained FeSe film consisted of two phases with different magnetic properties.

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The In2Oa-SnO 2 binary system between 1473 and 1873 K has been investigated bY TEM observations in detail. The intermediate compound has been detected above 1573 K in the composition range from 47.9 to 59.3 mol % SnO2, that crystal structure is long range ordered cubic system similar to In203 phase. On the other hand, below 1473 K, the intermediate compound is decomposed into In203 and SnO2 phases, according to the eutectoid reaction.

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