An extremely low-threshold current of 6 mA in cw mode at 22 °C was achieved in 1.55-μm InGaAsP/InP buried heterostructure distributed feedback lasers with a first-order grating and a normal cavity length of 300 μm. These lasers exhibited an average differential efficiency of 30% total at 4 mW without any coating on the facets, and a T0 (25–70 °C) value of 55 K. A spectral linewidth as low as 8 MHz at cw mode was obtained. The lasers showed high-speed pulse modulation response to 2.4 Gb/s (NRZ).
An InGaAsP edge-emitting light-emitting diode with a rear window and an integrated absorber is developed. Over 220 μW of coupled power is achieved, for the first time, without the use of antireflection front facet coating. Even at low ambient temperature of −40 °C the stimulated emission is well suppressed.
The internal loss modulation of a semiconductor laser has a very rapid response because it depends on the photon lifetime in an optical cavity. This technique is applicable to high‐frequency modulation and generation of short light impulses which could not be possible by means of ordinary current modulation. the present paper describes some results of small‐signal and large‐signal sinusoidal modulation which are obtained by applying a rate equation to a lateral field coupling control (LFCC) semiconductor laser. It is found that modulation at frequencies higher than 10 GHz is possible and that light impulses with 10‐ps half width can be obtained at several GHz. These results are applicable to other lasers with internal loss modulation.
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