High coupled power 1.3 μm edge-emitting light-emitting diode with a rear window and an integrated absorber

Abstract

An InGaAsP edge-emitting light-emitting diode with a rear window and an integrated absorber is developed. Over 220 μW of coupled power is achieved, for the first time, without the use of antireflection front facet coating. Even at low ambient temperature of −40 °C the stimulated emission is well suppressed.