High performance 1.3 μm InGaAsN superluminescent diodes

Qu, Yi; Li, Hui; Zhang, J. X.; Bo, Baoxue; Gao, Xin; Liu, Guojun

doi:10.1007/s11431-008-0233-3

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2011

2019

Publication Types

Select...

Article1

Other1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

High-power quantum-dot superluminescent tapered diode under CW operation

Forrest¹,

Krakowski²,

Bardella³

et al. 2019

Opt. Express

View full text Add to dashboard Cite

A high-power quantum-dot superluminescent diode is demonstrated under continuous-wave operation, with an output power of 137.5 mW and a corresponding spectral bandwidth of 21 nm. This represents not only the highest output power, but also a record-high power spectral density of 6.5 mW/nm for a CW-operated superluminescent diode in the 1.1-1.3 μm spectral region, marking more than a 6-fold increase with respect to the state of the art. The two-section contact layout of the reported device introduces additional degrees of freedom, which enable a wide tunability of the bandwidth and power depending on the desired application. A maximum bandwidth of 79 nm was recorded, with an output power of 1.4 mW. The high-power continuous-wave operation of this device would be particularly relevant for continuous, high-speed, high-sensitivity spectroscopy, imaging and sensing applications, as well as in optical communications. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

show abstract