40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes

Shimada, N.; Horiuchi, O.; Gen-Ei, K.; Tanaka, Atsushi; Okada, Minoru; Watanabe, Minoru; Itoh, Yasuyuki; Okuda, Hitoshi; Fukuoka, K.

doi:10.1109/2944.788443

IEEE J. Select. Topics Quantum Electron.

1999

DOI: 10.1109/2944.788443

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40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes

N. Shimada

O. Horiuchi²,

K. Gen-Ei³

et al.

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40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes

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