High-temperature operation (70°C, 50 mW) of 660-nm-band InGaAlP Zn-diffused window lasers fabricated using highly Zn-doped GaAs layers

Watanabe, Mutsumi; Shiozawa, H.; Horiuchi, O.; Itoh, Yasuyuki; Okada, Minoru; Tanaka, Atsushi; Gen-Ei, K.; Shimada, N.; Okuda, Hitoshi; Fukuoka, K.

doi:10.1109/2944.788447

Cited by 7 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several methods have been proposed to improve output power, including the reduction in optical field confinement in the epitaxial growth direction by reducing quantum well (QW) thickness 2,3) or utilizing a large optical cavity design, 4,5) and the prevention of facet absorption by employing windowmirror structures. 6,7) More recently, several efforts have been made to reduce threshold current or operation current to further improve output power. 1,[8][9][10] On the other hand, the requirement for the maximum operation temperature of the AlGaInP LDs has also recently been increased from 60 to 80 C, 10) particularly for outdoor applications such as portable players or computers.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes

Huang¹,

Sun

2006

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A theoretical analysis of a strain-compensated multiple-quantum-well (MQW) AlGaInP laser diode (LD) has been conducted to minimize the operation current and enhance the operation temperature. The effect of the barrier height on the tensile-strain quantum barriers was studied under the same optical confinement and emission wavelength. The simulation results suggest that a more uniform and higher carrier distribution inside the MQW region can be obtained for a lower barrier height owing to the improvement in carrier injection. The performance of the AlGaInP LD is thus improved. However, when the barrier height is too small, higher spontaneous rates in the quantum barrier region deteriorate the LD performance instead. Theoretical analysis shows that an Al composition of 0.1 for the 0.5%-tensile-strain Al x Ga y In1-x-y P barrier is the optimal value for strain-compensated MQW AlGaInP LDs.

show abstract