Simple opumization and growth models are studied numerically and also using analytic arguments to assess the importance of overhanging configurations of the interface and differences between quenched md annealed disorder.

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Recently, spin-on-glass (SOG) oxide has been used as an important technology to overcome the gap-filling limit of conventional high density plasma (HDP) oxide in shallow trench isolation (STI) process. One of them, a novel polysilazane spin-on-glass (P-SOG) film shows a complex mechanical behavior during an annealing process and an abnormal etch loading effect in the wet process. These unique properties ofP-SOGfilm give many opportunities to stress engineering. This paper proposed the simulation methodology to predict mechanical stresses in STI process by modeling the volumetric shrinkage phenomena of P-SOG and wet etch rate which is dependent on hydrostatic pressure. By interfacing a commercial FEM code, ABA QUS and in-house topography simulator, each of which has a portion of necessary models regarding P-SOG, we can predict the mechanical stress distribution on the various STI structures with real process profiles.

_ We investigated a new planarization process by employing an E-beam (electron-beam) cured HSQ (hydrogen siliesquioxane) based inorganic SOG (spirron-glass) ftlr pie-metal-dielectric material, in order to develop a simple planarization process with loy lhgrmal budget and good planarity in STC (stacked capacitor) DRAryI devices, and achieved lower leakage current and higher capacitance for TanO, capacitor as well as better planarization _performance than those of conventional USG etch bdck process. No degradation of device characteristics such as Vth change or hot carrier hardness, and gate oxide quality has been observed.