A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device

Abstract

Simple opumization and growth models are studied numerically and also using analytic arguments to assess the importance of overhanging configurations of the interface and differences between quenched md annealed disorder.

Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators

“…The largest dose (2500 µC/cm 2 ) corresponds to an average shift of 3.0 nm. This matches the simulated resonance shift for a cladding index change of Δn HSQ ≈ 0.1, which is reasonable for the large electron-beam exposure dose [32]. A linear dose-shift relationship (0.5 ±0.2 pm/µC/cm 2 ) is also established for the SH mode (Fig.…”

“…In this work we investigate the utility of HSQ electron-beam exposure as a method for high-resolution, post-fabrication, single device trimming, with the potential for mode-selective trimming. Electron-beam exposure of HSQ has been shown to induce cross-linking similar to thermal annealing, while high exposure intensity enables further refractive index tuning (up to n = 1.62) via the formation of silicon-rich SiO 2 [32,33]. Our results indicate that the induced wavelength shift is linearly dependent on the electron-beam exposure dose, with an observed trimming range of ∼ 5 nm for the applied doses.…”

“…Eigenmode simulations of the ring resonator predict that an increment in refractive index of Δn HSQ = + 0.1 in a 100 nm thick conformal HSQ cladding will red-shift the resonant wavelength of the fundamental mode by ∼ 2.98 nm and SH mode by ∼ 1.07 nm. With changes in HSQ refractive index as high as 0.22 reported [32,33], the predicted trimming range is capable of compensating for typical device-to-device fabrication variations.…”

Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization

“…In order to contact the top of the nanoscale device, a planarization with low-k dielectric such as HSQ (Ref. 25) is used here. The HSQ planarization process is shown in Figs. 1(e)-1(h).…”

“…In contrast, the phosphosilicate glass based planarization process needs higher temperature reflow to achieve insulating properties. 25,29 Next, a blanket RIE was performed using CF 4 and O 2 gas mixture of 20 and 5 sccm, respectively, to etch back HSQ to uncover the top metal of the nanopillars. The ICP and RIE power was chosen 25 and 50 W, respectively, which ensures minimum ion damage to HSQ surface.…”