Recently, spin-on-glass (SOG) oxide has been used as an important technology to overcome the gap-filling limit of conventional high density plasma (HDP) oxide in shallow trench isolation (STI) process. One of them, a novel polysilazane spin-on-glass (P-SOG) film shows a complex mechanical behavior during an annealing process and an abnormal etch loading effect in the wet process. These unique properties ofP-SOGfilm give many opportunities to stress engineering. This paper proposed the simulation methodology to predict mechanical stresses in STI process by modeling the volumetric shrinkage phenomena of P-SOG and wet etch rate which is dependent on hydrostatic pressure. By interfacing a commercial FEM code, ABA QUS and in-house topography simulator, each of which has a portion of necessary models regarding P-SOG, we can predict the mechanical stress distribution on the various STI structures with real process profiles.
As the design rule is scaled down, the electrical isolation of metal lines becomes critical. In a high density flash memory with 37nm (pitch=74nm) technology, the threshold voltage shift of ~0.3V is found to be caused by tungsten micro-bridge between adjacent bit-lines. Simulations and experimental data showed that tungsten re-sputtering is occurred during the deposition of HDP (High Density Plasma)-SiO 2 used as the filling dielectric between tungsten bit-lines. In this paper, the model for the tungsten re-sputtering is presented. The plasma simulations are performed to investigate the effects of process factors of HDP-SiO 2 deposition on the formation of micro-bridge using in-house tool, PIE simulator.
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