A Novel and Low Thermal Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured HSQ (Hydrogen Silsesquioxane) in STC (Stacked Capacitor) DRAM

Abstract

_ We investigated a new planarization process by employing an E-beam (electron-beam) cured HSQ (hydrogen siliesquioxane) based inorganic SOG (spirron-glass) ftlr pie-metal-dielectric material, in order to develop a simple planarization process with loy lhgrmal budget and good planarity in STC (stacked capacitor) DRAryI devices, and achieved lower leakage current and higher capacitance for TanO, capacitor as well as better planarization _performance than those of conventional USG etch bdck process. No degradation of device characteristics such as Vth change or hot carrier hardness, and gate oxide quality has been observed.