Rubbing angle between rubbing direction and electrode of In-plane switching (IPS) mode, is a key factor deciding liquid crystal behavior. We have derived the solution of liquid crystal (LC) motion of non-zero rubbing angle under weak electric field for IPS mode. Dependence of electro-optical characteristics on rubbing angle of non-negligible size was analyzed.
In this study, we investigate the effects of electron temperature T
e on the production of nanoparticles by using the grid-biasing method in hollow-typed magnetron radio frequency (RF) CH4/H2 plasma. We find that nanoparticles are produced in low-T
e plasma. On the other hand, thin film depositions, such as nanowalls, are mainly observed and almost no nanoparticles are created in high-T
e plasma. This implies that a reduction in the CH2/CH3 radical ratio is important for producing nanoparticles, together with a reduction in sheath potential in front of the substrate. The change in electron temperature in plasma has a marked effect on film quality.
Formation of diamond particles was investigated in an energy-controlled CH 4 /H 2 radio-frequency (RF) discharge plasma. Here, in particular, it was examined how diamond particles grew on a nickel substrate under an influence of Cu vapor that was supplied from a heated Cu wire. Here, the plasma was generated by a hollow-magnetron-type (HMT) RF plasma source at the frequency of 13.56 MHz. Total pressure was kept at 100 mTorr. Diamond particles grew besides Ni and Cu particles. From Raman spectrum the substrate surface was covered with thin graphite film deposited as a background layer. It was shown that diamond could grow in a self-organized manner even when the other atomic gas species such as Ni and Cu were contained in the gas at the same time during the growth process.
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