Control of Electron Temperature by Varying DC Voltage to a Mesh Grid Blanketed with Thin Film in Plasmas

Kato, K.; Emi, Junichi; Iizuka, Satoru

doi:10.1143/jjap.47.8565

Cited by 6 publications

(6 citation statements)

References 19 publications

(19 reference statements)

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“…When e 1.16 eV T = and , probe characteristics are not changed as known from the experiments in Section 2. Actually, we confirmed the usefulness of this probe analysis even in the RF discharges at frequency of 13.56 MHz ( [32] [33] [35]).…”

Section: Assumptionsupporting

confidence: 68%

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Analysis of Langmuir Probe Characteristics for Measurement of Plasma Parameters in RF Discharge Plasmas

Kato¹,

Iizuka²

2016

JAMP

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A simple method for measuring RF plasma parameters by means of a DC-biased Langmuir probe is developed. The object of this paper is to ensure the reliability of this method by using the other methods with different principles. First, Langmuir probe current e I response on RF voltage p1 V superimposed to DC p V biased probe was examined in DC plasmas. Next, probe current response of DC biased probe in RF plasmas was studied and compared with the first experiment. The results were confirmed by using an emissive prove method, an ion acoustic wave method, and a square pulse response method. The method using a simple Langmuir probe is useful and convenient for measuring electron temperature e T , electron density e n , time-averaged space potential s0 V , and amplitude of space potential oscillation s1 V in RF plasmas with a frequency of the order of pi pe 10 f f f < < .

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Section: Assumptionsupporting

confidence: 68%

“…Argon plasma is generated by RF (25 MHz) discharge. A grid electrode G located at the outlet of the RF electrode is used for controlling the electron temperature in the downstream region of plasma [32]- [35]. The grid G (16 mesh/in.)…”

Section: Electron Temperature Measurement With Ion Acoustic Wave Methodsmentioning

confidence: 99%

Analysis of Langmuir Probe Characteristics for Measurement of Plasma Parameters in RF Discharge Plasmas

Kato¹,

Iizuka²

2016

JAMP

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“…Kato et al [7,8] performed experiments on controlling the electron temperature on plasmas passing through a mesh grid from a discharge region. Recently, they have showed that the grid bias method can be used for temperature control, even if the conductivity of the grid is reduced by the deposition of a dielectric diamond-like carbon film [9]. Bai et al also used mesh grid to control the electron temperature in the diffuse region of an inductively coupled plasma [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Variation of plasma parameters in a modified mode of plasma production in a double plasma device

et al. 2010

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A modified mode of plasma production in a double plasma device is presented and plasma parameters are controlled in this configuration. Here plasma is produced by applying a discharge voltage between the hot filaments in the source (cathode) and the target magnetic cage (anode) of the device. In this configuration, the hot electron emitting filaments are present only in the source and the magnetic cage of this is kept at a negative bias such that due to the repulsion of the cage bias, the primary electrons can go to the grounded target and produce plasma there. The plasma parameters can be controlled by varying the voltages applied to the source magnetic cage and the separation grid of the device.

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“…Therefore, the control of e is of crucial importance for finding the best conditions of the chemical reactions necesary for the material processing [1][2][3][4]. In general, however, it is difficult to control e in weakly-ionized discharge plasmas, although several methods have been reported for the e control [1][2][3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…However, we have already demonstrated that the grid bias method can still control e over a wide range [9]. In fact, high-quality diamond was produced in RF discharge CH 4 /H 2 plasmas [14], where e was decreased by varying mechaniclly the length of slits in plasmas [8].…”

Section: Introductionmentioning

confidence: 99%

Efficient production of negative hydrogen ions in RF plasma by using a self-biased grid electrode

Kato¹,

Iizuka²

2017

IJERA

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ABSTRACT:Volume production of negative hydrogen ions is established efficiently in a pure hydrogen RF discharge plasma by using a self-biased grid electrode for production of low electron-temperature and high density plasma. Using this electrode both high and low electron temperature plasmas are produced in the regions separated by the grid electrode in the chamber, in which the electron temperature in the downstream region is controlled by the mesh size and plasma production parameters. The production rate of negative ions depends strongly on the electron temperature varied by the RF input power and hydrogen pressure. In the case of the grid electrode with the 5 mesh/in., the negative hydrogen ions are produced effectively in the downstream region in the hydrogen pressure range of 0.9 − 2.7 Pa. In addition, the production rate of the negative ion H − raises from 62 % to 87 % at 0.9 Pa by changing the RF power from 20 W to 80 W.

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Control of Electron Temperature by Varying DC Voltage to a Mesh Grid Blanketed with Thin Film in Plasmas

Cited by 6 publications

References 19 publications

Analysis of Langmuir Probe Characteristics for Measurement of Plasma Parameters in RF Discharge Plasmas

Analysis of Langmuir Probe Characteristics for Measurement of Plasma Parameters in RF Discharge Plasmas

Variation of plasma parameters in a modified mode of plasma production in a double plasma device

Efficient production of negative hydrogen ions in RF plasma by using a self-biased grid electrode

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