In-Zn-Sn-O films were deposited on a polycarbonate (PC) substrate by a magnetron co-sputtering system using two cathodes (DC, RF) without substrate heating. Two types of ITO targets (target A: doped with 5 wt.% SnO2, target B: doped with 10 wt.% SnO2) were used as an In-Sn-O source. The ITO and ZnO targets were sputtered by DC and RF discharges, respectively, and the composition of the In-Zn-Sn-O films was controlled via the power ratio of each cathode. In the case of ITO target A, the lowest resistivity (4.3 × 10Ωcm) was obtained for the film deposited at the RF power (ZnO) of 55W. In the case of ITO target B, the lowest resistivity (2.9 × 10Ωcm) of the film was obtained at the RF power (ZnO) of 30W, which was attributed to the increase in carrier density. Hall mobility decreased with increasing carrier density, which could be explained by the increase in ionized impurity scattering.
Ga-doped ZnO films were deposited on polyethylene terephthalate (PET) substrate by dc
magnetron sputtering using a high density GZO target (doped with 6.65 wt% Ga2O3) without
substrate heating. We investigated electrical, structural, and mechanical properties of GZO films
deposited under various total gas pressures (Ptot). GZO films deposited at Ptot of 2.0 Pa showed the
lowest resistivity (2.91 x 10-2 7cm), which could be attributed to higher crystallinity of the film. Also,
this GZO film showed the lowest change in resistance (8 R/R0 = 0.3) for the dynamic bending test.
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