Characteristics of IZSO films deposited by a co-sputtering system

Abstract

In-Zn-Sn-O films were deposited on a polycarbonate (PC) substrate by a magnetron co-sputtering system using two cathodes (DC, RF) without substrate heating. Two types of ITO targets (target A: doped with 5 wt.% SnO2, target B: doped with 10 wt.% SnO2) were used as an In-Sn-O source. The ITO and ZnO targets were sputtered by DC and RF discharges, respectively, and the composition of the In-Zn-Sn-O films was controlled via the power ratio of each cathode. In the case of ITO target A, the lowest resistivity (4.3 × 10Ωcm) was obtained for the film deposited at the RF power (ZnO) of 55W. In the case of ITO target B, the lowest resistivity (2.9 × 10Ωcm) of the film was obtained at the RF power (ZnO) of 30W, which was attributed to the increase in carrier density. Hall mobility decreased with increasing carrier density, which could be explained by the increase in ionized impurity scattering.

Deposition of ISZO Films on Polymer Substrate Using Two Cathodes

“…2(e) Mechanical properties of all the ISZO films were improved by Zn atom introduction. This result means that ITO film is attributed to the formation of amorphous-like structure caused by the Zn atom introduction, which was confirmed in our previous report [9]. Therefore, ISZO films probably have smaller internal stress compared with that of ITO films [10].…”

Self-Powered Mechanical Energy Sensor Application of SnO2/Ag and PMMA/ITO Nanocomposites via Triboelectric Effect

“…According to this, the depths were shallow (-9 µm to 7 µm) before the heat treatment but grew significantly (-15 µm to 11 µm) thereafter. We can attribute this to the fact that Sn and O2 ratios have levelled out on a regional scale (J. R. Lee et al, 2007). The surface roughness plots generated have about the value of 1.7 nm and 5.2 nm as its average value for untreated and 673 K, respectively.…”

Effect of Oxygen Partial Pressure and Sintering Temperature on the Evaporation of Elements during Sintering in In-Sn-Zn-O Transparent Conducting Oxide Systems

“…Indium Tin Oxide (ITO) thin films have been widely used in display panels. However, microcracks are easily formed and lead to electric breakdown when bent and unfolded repeatedly for the application to flexible display panels [2,3,4]. Therefore, it is necessary to develop a material that can overcome the disadvantage of ITO thin films.…”

“…Sputtering efficiency and physical properties of thin films are known to be affected greatly by target density (porosity), grain size, electrical conductivity, etc. [2,3,[6][7][8][9][10]. The co-sputtering method using two or more kinds of targets is difficult to utilize due to many processing variables to be precisely controlled.…”