An ultra-high bandwidth (BW) and a low V π InP Mach-Zehnder modulator with an n-i-p-n heterostructure is proposed. The combination of the n-i-p-n heterostructure and the capacitive-loaded travelling-wave electrode provides a modulator with extremely low electrical loss. The device exhibits a 3 dB electro-optic BW of over 67 GHz and a V π of 2.0 V. A 100 Gb/s non-return-to-zero on-off keying modulation with an extinction ratio of over 10 dB is also realised.
The authors obtained very good back‐to‐back bit error rate performance in up to 80 Gbaud DP‐16QAM operation by using their coherent driver modulator of a 3‐dB electro‐optic bandwidth of over 50 GHz. To achieve high bandwidth and good signal integrity, they used double ultra‐low loop wires between the driver IC and the modulator and a differential capacitively loaded travelling‐wave RF electrode based on straight coupled coplanar waveguide with a ground‐signal–signal‐ground configuration for their InP modulator. As far as they know, this is the highest bandwidth and baud rate operation so far for the high‐bandwidth coherent driver modulator configuration.
We developed an InP-based coherent driver modulator (CDM) with a flexible printed circuit (FPC) RF interface. The CDM has a 3-dB electro-optic (EO) bandwidth of over 85 GHz, including the evaluation board loss, which is sufficient for 1-Tb/s/-class operation. Furthermore, we obtained good back-to-back bit-error-rate (BER) performance in modulations up to 144-Gbaud dual-polarization 16-QAM, and we confirmed the CDM's capability for operation over the 150-Gbaud class. With the FPC RF interface, a package's roll-off frequency above 100 GHz was demonstrated in both measured and simulated results. The CDM includes an InP-based n-i-p-n heterostructure modulator chip with a differential capacitively loaded travelingwave electrode (CL-TWE) and a 4-channel linear SiGe BiCMOS driver IC with an open-collector configuration and low wire inductance. The modulator chip has an EO 3-dB bandwidth of over 70 GHz, which is an improvement of about 30 GHz over that of a conventional p-i-n structure. In addition, to facilitate future 200-Gbaud-class operation, a simulation with a reduced GND via diameter confirmed that the package's roll-off frequency can be improved to more than 120 GHz. Moreover, by reducing the CL-TWE period and the metal's DC resistance, the n-i-p-n modulator chip achieve an EO 3-dB bandwidth of 90 GHz or more.
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