Ultra-High Bandwidth InP IQ Modulator for Beyond 100-GBd transmission

Ogiso, Yoshihiro; Ozaki, Josuke; Ueda, Yuta; Wakita, Hitoshi; Nagatani, Munehiko; Yamazaki, Hiroshi; Nakamura, Masanori; Kobayashi, Toshio; Kanazawa, Shigeru; Fujii, T.; Hashizume, Yoshio; Tanobe, Hiromasa; Nunoya, Nobuhiro; Ida, M.; Miyamoto, Yutaka; Ishikawa, Masahito

doi:10.1364/ofc.2019.m2f.2

Cited by 19 publications

(13 citation statements)

References 4 publications

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“…Photonic integrated circuit (PIC) technologies e.g. indium phosphide (InP) and silicon material platforms offer more compact dual-polarization I/Q modulator designs [3], [4]. InP MZMs have been demonstrated for QPSK and 16QAM signaling at 128 Gbaud and 112 Gbaud symbols rates, respectively [3].…”

Section: Introductionmentioning

confidence: 99%

“…indium phosphide (InP) and silicon material platforms offer more compact dual-polarization I/Q modulator designs [3], [4]. InP MZMs have been demonstrated for QPSK and 16QAM signaling at 128 Gbaud and 112 Gbaud symbols rates, respectively [3]. However, the fabrication yield, small wafer size and the lack of on-PIC polarization management in dual-polarization coherent transceivers designs pose challenges for full InP based coherent transceiver solutions consequently incresing the cost of the final component.…”

Section: Introductionmentioning

confidence: 99%

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Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

Melikyan

Kaneda

Kim

et al. 2020

J. Lightwave Technol.

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We demonstrate up to 100 Gbaud quadratureamplitude modulated (QAM) signal generation with monolithic silicon in-phase quadrature (I/Q)-modulator based on silicongermanium (SiGe) electro-absorption modulators (EAM). The modulator is in a differentially driven Mach-Zehnder (MZ) interferometric configuration similar to the conventional MZ modulator (MZM) based (I/Q) modulators. In particular, singlepolarization quadrature phase-shift keying (SP-QPSK) signaling at symbol rates of 100 Gbaud with BERs below the hard-decision forward error correction (FEC) limit is shown. SP-QPSK optical signal generation and transmission over 80 km single-mode fiber (SMF) are demonstrated at symbol rates of 50 Gbaud with BER of less than 10 −5 . The effect of the frequency roll-off used for Nyquist pulse shaping with raised cosine frequency response is studied for SP-QPSK 50 Gbaud signals. Furthermore, 16QAM signals at symbol rates of 50 Gbaud are generated.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

Melikyan

Kaneda

Kim

et al. 2020

J. Lightwave Technol.

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“…Tremendous efforts have been made to realise small-footprint and high-performance IQ modulators in various material platforms, including silicon (Si), indium phosphide (InP), polymers, and plasmonics [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] . Although these platforms normally offer the advantages of compact footprints and large bandwidths, each type of modulator has its limitations, including large V π (Si), high optical loss (plasmonics), nonlinear response (InP), or doubts over long-term stability (polymer).…”

mentioning

confidence: 99%

High-performance coherent optical modulators based on thin-film lithium niobate platform

Zhang³

et al. 2020

Nat Commun

338

152

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The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase/quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature a low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demonstrate integrated thin-film lithium niobate in-phase/quadrature modulators that fulfil these requirements simultaneously. The presented devices exhibit greatly improved overall performance (half-wave voltage, bandwidth and optical loss) over traditional lithium niobate counterparts, and support modulation data rate up to 320 Gbit s −1. Our devices pave new routes for future highspeed, energy-efficient, and cost-effective communication networks.

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“…Their assembly with the electronic driver has been studied in different platforms [2,3]. Ultra-high bandwidth InP IQ modulator for 100 GBd transmission is shown in [4], and an optical frontend module operating at 192 GBd in [5]. All of the demonstrated state-of-the-art ASICs were fabricated in an inhouse technology process.…”

Section: Introductionmentioning

confidence: 99%

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Trajkovic¹,

Zhang²,

Blache

et al. 2019

45th European Conference on Optical Communication (ECOC 2019)

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Ultra-High Bandwidth InP IQ Modulator for Beyond 100-GBd transmission

Cited by 19 publications

References 4 publications

Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

High-performance coherent optical modulators based on thin-film lithium niobate platform

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

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