Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

Melikyan, Argishti; Kaneda, Noriaki; Kim, Kwangwoong; Baeyens, Y.; Dong, Po

doi:10.1109/jlt.2020.2978190

Cited by 20 publications

(17 citation statements)

References 24 publications

(33 reference statements)

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“…Despite the limited bandwidth of 1 GHz, this promising demonstration triggered other demonstrations of EAMs. 20,38,128,[133][134][135][136][137][138][139]231,232 An evanescently coupled 55 μm 2 GeSi EAM has been reported on a thick SOI platform (silicon guiding layer thickness of 3 μm), actuated by a horizontal PIN junction. 135 This EAM is butt-coupled to the thick SOI waveguide through an appropriately designed taper.…”

Section: (Silicon-)germaniummentioning

confidence: 99%

“…The 400-μm 2 modulator with 6.3 GHz bandwidth and 0 to 3 V swing provided ∼4 dB ER and 3 dB IL. The FK effect or QCS effect electro-absorption amplitude modulators allow for the implementation of coherent I∕Q 231,232 and advanced amplitude modulation schemes such as PAM-4. 233 These modulation schemes are a promising solution for shortand long-reach links because they are spectrally efficient while being tolerant of optical fiber transmission impairments.…”

Section: (Silicon-)germaniummentioning

confidence: 99%

“…233 These modulation schemes are a promising solution for shortand long-reach links because they are spectrally efficient while being tolerant of optical fiber transmission impairments. 54,55,231 The implementation of an EAM-based I∕Q or PAM-4 modulators relies on balanced MZIs with an EAM and a fixed phaseshift in the arms of the MZI. [231][232][233] Typically, an unequal splitting of the optical carrier is required by the splitter of the MZI to achieve the appropriate eye-opening for PAM-4 or constellation for the I∕Q signal.…”

Section: (Silicon-)germaniummentioning

confidence: 99%

“…54,55,231 The implementation of an EAM-based I∕Q or PAM-4 modulators relies on balanced MZIs with an EAM and a fixed phaseshift in the arms of the MZI. [231][232][233] Typically, an unequal splitting of the optical carrier is required by the splitter of the MZI to achieve the appropriate eye-opening for PAM-4 or constellation for the I∕Q signal. 233 Literature reports an EAM-based PAM-4 modulator by integrating an EAM in each arm of a two-port balanced MZI.…”

Section: (Silicon-)germaniummentioning

confidence: 99%

“…233 Literature reports an EAM-based PAM-4 modulator by integrating an EAM in each arm of a two-port balanced MZI. [231][232][233] In this modulator, a fixed phase shift is provided by embedding a thermal phase shifter in one of the two arms of the MZI. The device modulated a 128-Gb∕s PAM-4 signal without requiring any DSP.…”

Section: (Silicon-)germaniummentioning

confidence: 99%

See 4 more Smart Citations

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

et al. 2021

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Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale. The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective. Silicon photonics (SiPh), a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology, is well-positioned to deliver the performance, price, and manufacturing volume for the high-speed modulators of future optical communication links. SiPh has relied on the plasma dispersion effect, either in injection, depletion, or accumulation mode, to demonstrate efficient high-speed modulators. The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance. Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators. These modulators are in the early years of their development. They promise to extend the performance beyond the limits set by the physical properties of silicon. The focus of our study is to provide a comprehensive review of contemporary (i.e., plasma dispersion modulators) and new modulator implementations that involve the integration of novel materials with SiPh.

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Section: (Silicon-)germaniummentioning

confidence: 99%

Section: (Silicon-)germaniummentioning

confidence: 99%

Section: (Silicon-)germaniummentioning

confidence: 99%

Section: (Silicon-)germaniummentioning

confidence: 99%

Section: (Silicon-)germaniummentioning

confidence: 99%

See 3 more Smart Citations

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

et al. 2021

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Toward coherent O-band data center interconnects

Seiler

Georgieva

Winzer

et al. 2021

Front. Optoelectron.

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Upcoming generations of coherent intra/inter data center interconnects currently lack a clear path toward a reduction of cost and power consumption, which are the driving factors for these data links. In this work, the tradeoffs associated with a transition from coherent C-band to O-band silicon photonics are addressed and evaluated. The discussion includes the fundamental components of coherent data links, namely the optical components, fiber link and transceivers. As a major component of these links, a monolithic silicon photonic BiCMOS O-band coherent receiver is evaluated for its potential performance and compared to an analogous C-band device.

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Silicon–Lithium Niobate Hybrid Intensity and Coherent Modulators Using a Periodic Capacitively Loaded Traveling-Wave Electrode

et al. 2022

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High-performance silicon and thin-film lithium niobate hybrid electro-optic modulators are demonstrated. In order to break the voltage–bandwidth limit in a normal traveling-wave modulator, a periodic capacitively loaded traveling-wave electrode is employed in this hybrid platform. The silicon substrate is undercut-etched to achieve index matching of the optical wave and microwave. A hybrid waveguide with a lithium niobate thin film bonded on a silicon wire is employed. Lithium niobate etching is not required for making the hybrid optical waveguides. We realize an intensity modulator of 12.5 mm long modulation section, which exhibits a low half-wave voltage of 1.7 V and a large 3 dB modulation bandwidth of >70 GHz. Data transmissions with various modulation formats beyond 100 Gbit/s are successfully achieved with dynamic extinction ratios of >8 dB. Combining the advantages of the silicon and thin-film lithium niobate platforms, a compact dual polarization coherent modulator is also experimentally demonstrated, on which 96 Gbaud 16-level quadrature amplitude modulation signals in both polarizations are successfully transmitted.

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Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

Cited by 20 publications

References 24 publications

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

Toward coherent O-band data center interconnects

Silicon–Lithium Niobate Hybrid Intensity and Coherent Modulators Using a Periodic Capacitively Loaded Traveling-Wave Electrode

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