To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fully PIC-compatible integration of BTO-based devices and is, as shown, scalable to 200 mm wafers. The PICintegrated BTO Mach-Zehnder modulators outperform conventional Si photonic modulators in modulation efficiency, losses, and static tuning power. The devices show excellent V π L (0.2 Vcm) and V π Lα (1.3 VdB), work at high speed (25 Gbps), and can be tuned at low-static power consumption (100 nW). Our concept demonstrates the possibility of monolithic integration of Pockels-based electro-optic modulators in advanced silicon photonic platforms.

Offering open-access silicon photonics-based technologies has played a pivotal role in unleashing this technology from research laboratories to industry. Fabless enterprises rely on the open-access of these technologies for their product development. In the last decade, a diverse set of open-access technologies with medium and high technology readiness levels have emerged. This paper provides a review of the open-access silicon and silicon nitride photonic IC technologies offered by the pilot lines of European research institutes and companies. The

In this paper we present four-wave mixing (FWM) based parametric conversion experiments in p-i-n diode assisted silicon-on-insulator (SOI) nano-rib waveguides using continuous-wave (CW) light around 1550 nm wavelength. Using a reverse biased p-i-n waveguide diode we observe an increase of the wavelength conversion efficiency of more than 4.5 dB compared to low loss nano-rib waveguides without p-i-n junction, achieving a peak efficiency of -1 dB. Conversion efficiency improves also by more than 7 dB compared to previously reported experiments deploying 1.5 µm SOI waveguides with p-i-n structure. To the best of our knowledge, the observed peak conversion efficiency of -1dB is the highest CW efficiency in SOI reported so far.

Fundamental limiting factors regarding high-speed performance of broadband depletion-type silicon (Si) Mach-Zehnder modulators (MZMs) are studied. Optical and electrical measurements of MZMs with traveling wave electrodes (TWE) reveal significant dependences between optoelectrical bandwidth and design parameters. An equivalent circuit model is implemented to fit measured modulator characteristics. Using the model, the limits of TWE depletion-type Si MZM systems are studied under the requirement of specific driving voltage. By comparing phase shifters with different doping concentration or junction position, we explore the fundamental optical and electrical tradeoffs which are limiting high-speed operation.

No abstract

No abstract

No abstract

Upcoming generations of coherent intra/inter data center interconnects currently lack a clear path toward a reduction of cost and power consumption, which are the driving factors for these data links. In this work, the tradeoffs associated with a transition from coherent C-band to O-band silicon photonics are addressed and evaluated. The discussion includes the fundamental components of coherent data links, namely the optical components, fiber link and transceivers. As a major component of these links, a monolithic silicon photonic BiCMOS O-band coherent receiver is evaluated for its potential performance and compared to an analogous C-band device.