Ultra-High Bandwidth InP IQ Modulator co-assembled with Driver IC for Beyond 100-GBd CDM

Ogiso, Yoshihiro; Wakita, Hitoshi; Nagatani, Munehiko; Yamazaki, Hiroshi; Nakamura, Makoto; Kobayashi, Takayuki; Ozaki, Josuke; Ueda, Yuta; Nakano, Satoshi; Kanazawa, Shigeru; Fujii, T.; Hashizume, Yoshio; Tanobe, Hiromasa; Nunoya, Nobuhiro; Ida, M.; Miyamoto, Yutaka; Kikuchi, Nobuhiro

doi:10.1364/ofc.2018.th4a.2

Cited by 17 publications

(6 citation statements)

References 3 publications

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“…From this point of view, the CDM configuration is effective in reducing the RF loss because the driver IC and modulator are co-designed and assembled next to each other in one package. Many reported InP-based modulators employ this configuration [5]- [8]. We have already confirmed a 3-dB EO bandwidth of over 67 GHz and operates up to 128 Gbaud in a driver modulator sub-assembly without an RF package, and this configuration is suitable for transmission at higher speeds [5].…”

supporting

confidence: 59%

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500-Gb/s/λ Operation of Ultra-Low Power and Low-Temperature-Dependence InP-Based High-Bandwidth Coherent Driver Modulator

Ozaki

Ogiso

Jyo

et al. 2020

J. Lightwave Technol.

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For 64-Gbaud operation and beyond, we developed a power efficient high-bandwidth coherent driver modulator composed of a linear four-channel ultra-low power CMOS driver IC and an InP-based dual-polarization IQ modulator. The CMOS driver was fabricated in 65-nm CMOS technology and showed power dissipation of <1 W owing to the use of an open-drain configuration and a stacked current-mode architecture. Moreover, by optimizing the temperature of the thermoelectric cooler that controls the modulator operating temperature, the coherent driver modulator achieved consumed power of <2.5 W at case temperatures of −5 to 75°C and <2.8 W under −5 to 85°C. As far as we know, this is the lowest power dissipation for a coherent driver modulator with an InP modulator chip. In addition, by employing a circuit that suppresses temperature dependence of RF characteristics in the CMOS driver, we achieved the 3-dB electro-optical bandwidth of >44 GHz and the variation of 2.0 GHz under the 25°to 85°C condition. Furthermore, we obtained good back-to-back bit-error-rate performance in up to dual polarization 80-Gbaud 16-QAM modulation.

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supporting

confidence: 59%

“…For the InP-based dual-IQ modulator chip, we employed a CL-TWE based on a differential GSSG configuration, as shown in Fig. 1 [5]. The modulator chip size has a length of 9.1 mm and a width of 3.3 mm.…”

Section: B Inp Modulatormentioning

confidence: 99%

500-Gb/s/λ Operation of Ultra-Low Power and Low-Temperature-Dependence InP-Based High-Bandwidth Coherent Driver Modulator

Ozaki

Ogiso

Jyo

et al. 2020

J. Lightwave Technol.

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“…To keep up with this ever-increasing demand, the digital coherent transmission technology has been introduced for long-haul communication links and is allowing networks to approach the maximum achievable capacity of optical fibres, known as the Shannon limit [3][4][5][6][7] . This technology is now expected to penetrate into the rapidly growing, capacity-hungry short reach links, such as metro and data-centre interconnects, where an in-phase/quadrature (IQ) modulator must be operated in a small space, while featuring low loss, low drive voltages, and large bandwidths [8][9][10] . For nearly a decade, IQ modulators based on low-index-contrast lithium niobate (LiNbO3, LN) waveguides have been the mainstay for generating the advanced modulation formats [11][12][13][14] .…”

mentioning

confidence: 99%

High-performance coherent optical modulators based on thin-film lithium niobate platform

Zhang³

et al. 2020

Nat Commun

338

152

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The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase/quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature a low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demonstrate integrated thin-film lithium niobate in-phase/quadrature modulators that fulfil these requirements simultaneously. The presented devices exhibit greatly improved overall performance (half-wave voltage, bandwidth and optical loss) over traditional lithium niobate counterparts, and support modulation data rate up to 320 Gbit s −1. Our devices pave new routes for future highspeed, energy-efficient, and cost-effective communication networks.

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“…Thus, further increasing the aggregate net rates in a single-core SMF To obtain a high-quality, high-symbol-rate signal, it is important to minimize the narrowing of the signal band due to the frequency response of optical/electrical devices in the transceiver. Research and development of wideband devices is underway, and reports of high-speed modulators [39], [40] and broadband electrical amplifiers [41] have emerged. Two key devices in high-speed signal generation and detection are DACs and ADCs integrated with the DSP chip.…”

Section: Proceedings Of the Ieeementioning

confidence: 99%

Coherent Optical Transceivers Scaling and Integration Challenges

et al. 2022

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The advancement of digital coherent technologies has dramatically increased the system capacity per singlecore single-mode fiber to the point that we can now approach the Shannon limit by utilizing high-order modulation formats and high-coding gain forward error correction (FEC) codes.Because the required energy per bit increases exponentially the closer we get to the Shannon limit, extending the available optical bandwidth by using ultrawideband wavelength-division multiplexing (WDM) and/or spatial-division multiplexing (SDM) is indispensable for increasing the system capacity with high energy efficiency. However, simple extensions of wavelength resources and spatial parallelization dramatically increase the number of transceivers (TxRxs) in proportion to the wavelength/spatial multiplicity. The key to achieving cost-and energy-efficient systems is to reduce the system complexity by using high-density integration and broadband optelectronics.In this article, we overview and discuss the recent advances of coherent optical transceivers integrated with an optical front end and digital signal processing (DSP)/application-specific integrated circuit (ASIC). We then present the transponder architectures and the challenges involved in applying them for massive parallelized transmission systems.

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Ultra-High Bandwidth InP IQ Modulator co-assembled with Driver IC for Beyond 100-GBd CDM

Cited by 17 publications

References 3 publications

500-Gb/s/λ Operation of Ultra-Low Power and Low-Temperature-Dependence InP-Based High-Bandwidth Coherent Driver Modulator

500-Gb/s/λ Operation of Ultra-Low Power and Low-Temperature-Dependence InP-Based High-Bandwidth Coherent Driver Modulator

High-performance coherent optical modulators based on thin-film lithium niobate platform

Coherent Optical Transceivers Scaling and Integration Challenges

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