Herzinger, C. M.; Johs, B.; McGahan, W. A.; Woollam, John A.; and Paulson, W., "Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation" (1998 Optical constant spectra for silicon and thermally grown silicon dioxide have been simultaneously determined using variable angle of incidence spectroscopic ellipsometry from 0.75 to 6.5 eV. Spectroscopic ellipsometric data sets acquired at multiple angles of incidence from seven samples with oxide thicknesses from 2 to 350 nm were analyzed using a self-contained multi-sample technique to obtain Kramers-Kronig consistent optical constant spectra. The investigation used a systematic approach utilizing optical models of increasing complexity in order to investigate the need for fitting the thermal SiO 2 optical constants and including an interface layer between the silicon and SiO 2 in modeling the data. A detailed study was made of parameter correlation effects involving the optical constants used for the interface layer. The resulting thermal silicon dioxide optical constants were shown to be independent of the precise substrate model used, and were found to be approximately 0.4% higher in index than published values for bulk glasseous SiO 2 . The resulting silicon optical constants are comparable to previous ellipsometric measurements in the regions of overlap, and are in agreement with long wavelength prism measurements and transmission measurements near the band gap.

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We have studied the optical properties (complex dielectric function) of bulk SrTiO3 and thin films on Si and Pt using spectroscopic ellipsometry over a very broad spectral range, starting at 0.03 eV [using Fourier transform infrared (FTIR) ellipsometry] to 8.7 eV. In the bulk crystals, we analyze the interband transitions in the spectra to determine the critical-point parameters. To interpret these transitions, we performed band structure calculations based on ab initio pseudopotentials within the local-density approximation. The dielectric function was also calculated within this framework and compared with our ellipsometry data. In the FTIR ellipsometry data, we notice a strong lattice absorption peak due to oxygen-related vibrations. Two longitudinal optic (LO) phonons were also identified. In SrTiO3 films on Si, the refractive index below the band gap decreases with decreasing thickness because of the increasing influence of the amorphous interfacial layer between the SrTiO3 film and the Si substrate. There is also a decrease in amplitude and an increase in broadening of the critical points with decreasing thickness. In SrTiO3 films on Pt, there is a strong correlation between the crystallinity and texture of the films (mostly aligned with the Pt pseudosubstrate) and the magnitude of the refractive index, the Urbach tail below the bulk band edge, and the critical-point parameters. FTIR reflectance measurements of SrTiO3 on Pt (reflection–absorption spectroscopy) show absorption peaks at the LO phonon energies, a typical manifestation of the Berreman effect for thin insulating films on a metal. The Urbach tail in our ellipsomety data and the broadening of the optical phonons in SrTiO3 on Pt are most likely caused by oxygen vacancy clusters.

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Wetteroth, T.; Wilson, S. R.; and Powell, Adrian R., "Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry" (1999 Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry We have measured the dielectric function of bulk nitrogen-doped 4H and 6H SiC substrates from 700 to 4000 cm Ϫ1 using Fourier-transform infrared spectroscopic ellipsometry. Photon absorption by transverse optical phonons produces a strong reststrahlen band between 797 and 1000 cm Ϫ1 with the effects of phonon anisotropy being observed in the region of the longitudinal phonon energy ͑960 to 100 cm Ϫ1 ͒. The shape of this band is influenced by plasma oscillations of free electrons, which we describe with a classical Drude equation. For the 6H-SiC samples, we modify the Drude equation to account for the strong effective mass anisotropy. Detailed numerical regression analysis yields the free-electron concentrations, which range from 7ϫ10 17 to 10 19 cm Ϫ3 , in good agreement with electrical and secondary ion mass spectrometry measurements.Finally, we observe the Berreman effect near the longitudinal optical phonon energy in nϪ/nϩ homoepitaxial 4H SiC and hydrogen implanted samples, and we are able to determine the thickness of these surface layers.

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