Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO_2

Schubert, M.; Rheinländer, B.; Woollam, John A.; Johs, B.; Herzinger, C. M.

doi:10.1364/josaa.13.000875

Cited by 168 publications

(86 citation statements)

References 8 publications

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“…A. Woollam Co.͒, where is defined as the angle between the plane of incidence and a crystallographic sample orientation parallel to the sample surface. 32 IRSE measurements were carried out in the wave number range between 700 and 3000 cm Ϫ1 at multiple angles of incidence (⌽ a ϭ65-75°͒. A rotating-polarizer, rotatingcompensator, Fourier-transform based variable angle of incidence spectroscopic ellipsometer was used.…”

Section: Methodsmentioning

confidence: 99%

“…Geick et al 16 observed two characteristic h-BN lattice resonance absorptions for electric field polarizations E parallel ͑out-of-plane: ʈ ͒ and perpendicular ͑in-plane: Ќ͒ to the lattice c axis, characterized by their transverse ͑TO͒ and longitudinal ͑LO͒ optical frequencies TOʈ ϭ783 cm Ϫ1 , LOʈ ϭ823 cm Ϫ1 , TOЌ ϭ1367 cm Ϫ1 , and LOЌ ϭ1610 cm Ϫ1 , respectively. Gielisse et al 17 32 In order to analyze ellipsometry data one needs to model the sample structure, including the material optical properties.…”

Section: Introductionmentioning

confidence: 99%

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Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Franke

Schubert

Neumann

et al. 1997

Journal of Applied Physics

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Frank, "Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range" (1997 Spectroscopic ellipsometry over the spectral range from 700 to 3000 cm Ϫ1 and from 1.5 to 3.5 eV is used to simultaneously determine phase and microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering on ͑100͒ silicon. The results are obtained from a single microstructure-dependent model for both infrared and visible-light thin-film anisotropic dielectric functions. The optical behavior of high c-BN content thin films is described by an effective medium approximation. We obtain the amount of h-BN within high c-BN content thin films. A thin oriented nucleation layer between the silicon substrate and the high c-BN content layer is demonstrated. The preferential arrangement of the grain c axes within the h-BN thin films are found to be dependent on the growth parameters. The results from the infrared and visible spectral range ellipsometry model are compared to each other and found to be highly consistent. © 1997 American Institute of Physics. ͓S0021-8979͑97͒06618-8͔

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Franke

Schubert

Neumann

et al. 1997

Journal of Applied Physics

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“…For our films it is necessary to apply a generalized ellipsometry approach since both GaN and sapphire are anisotropic materials and because of the non-c-axis orientation of the films and substrates. 30,[34][35][36] In the generalized ellipsometry situation Eq. ͑7͒ depends on the polarization state of the incident plane wave and the respective parameters ⌿ ij and ⌬ ij ͑i , j = p , s͒ are defined by the following ratios of the polarized light reflection coefficients:…”

Section: ͑7͒mentioning

confidence: 99%

Anisotropic strain and phonon deformation potentials in GaN

et al. 2007

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“…It can be easily implemented to work with uniaxial materials [45] (like corundum) and is sensitive to small anisotropies [46,47]. For our sample geometry, in which an oblique angle of incidence was used, only the ordinary dielectric function can be accessed with high sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Ordinary dielectric function of corundumlike α−Ga2O3 from 40 meV to 20 eV

Feneberg

Nixdorf

Neumann

et al. 2018

Phys. Rev. Materials

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The linear optical response of metastable α-Ga 2 O 3 is investigated by spectroscopic ellipsometry. We determine the ordinary dielectric function from lattice vibrations up to the vacuum ultraviolet spectral range at room temperature for a sample with a (0001) surface. Three out of four E u infrared-active phonon modes are unambiguously determined, and their frequencies are in good agreement with density functional theory calculations. The dispersion of the refractive index in the visible and ultraviolet part of the spectrum is determined. High-energy interband transitions are characterized up to 20 eV. By comparison with the optical response of α-Al 2 O 3 and with theoretical results, a tentative assignment of interband transitions is proposed.

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Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO_2

Cited by 168 publications

References 8 publications

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Anisotropic strain and phonon deformation potentials in GaN

Ordinary dielectric function of corundumlike α−Ga2O3 from 40 meV to 20 eV

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