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A novel lateral power fin metal-oxide-semiconductor field-effect transistor (MOSFET) made on a silicon-on-insulator substrate is proposed. The fin silicon drift region of the proposed device is surrounded by a high-k (HK) passivation. The HK passivation enables the proposed device to realize a three-dimensional (3D) enhanced reduced-surface-field action and a 3D accumulation layer. According to the simulation results, when compared to a lateral power planar MOSFET with an HK passivation, the proposed device offers a 78% reduction in specific on-resistance at the same 100-V breakdown voltage. More comparative studies indicate that the static characteristic of the proposed device not only overcomes the silicon limit but also presents a significant advantage when compared to the prior art. INDEX TERMS Lateral power MOSFET, fin MOSFET, high-k (HK), silicon-on-insulator (SOI), reducedsurface-field (RESURF), accumulation layer, specific on-resistance (R ON ,SP), breakdown voltage (BV).

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A novel reverse-conducting (RC) silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed. It features a built-in thyristor formed by introducing a floating P-well surrounding an N + collector. The realization of the thyristor barely increases chip area or complicates fabrication. It helps to realize the RC function and prevents the device from working in the unipolar mode, which eliminates the snapback problem. Moreover, since the thyristor provides an electron extraction path during the turn-off operation, the switching performance is improved. Simulation results show that, compared with the conventional LIGBT with an antiparallel diode, the proposed device presents the reverse recovery charge (Qrr) and the turnoff loss (Eoff) reduced by more than 30%, and the RC voltage drop (VF) decreased by about 0.1 V. key words: lateral insulated gate bipolar transistor (LIGBT), reverseconducting (RC), snapback-free Classification: Power devices and circuits This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented.

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An experimental study of the intense current electron beam diode with a foil-free annular C–C composite material cathode is carried out, the attenuation process of cathode carbon ions at different axial magnetic fields is acquired using an ultrahigh speed 12 framing camera, and the attenuation characteristics of cathode plasma under different discharging voltage waveforms have also been studied. The experiment results show that with the increase in the magnetic field, the force of the axial magnetic field on the electron beam becomes stronger, and the spatial distribution of the Cherenkov radiation light, which is generated by the electron beam bombarding the observation window, decreases. Meanwhile, if the axial magnetic field is less than 0.46 T, the cathode carbon ions have disappeared before reaching the anode. When the axial magnetic field is greater than 0.46 T, the cathode carbon ions move to the anode and then disappear in the vicinity of the anode. A rough estimate shows that the axial diffusion velocity of the cathode carbon ions is about 1.94 cm/μs. In addition, if the discharging voltage waveform has a kickback positive voltage, the carbon ions will diffuse rapidly in the radial direction.