Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance

Cheng, Junji; Lin, Jingjie; Chen, Weizhen; Wu, Shuangyi; Huang, Haimeng; Yi, Bo

doi:10.1109/access.2020.2980042

Cited by 4 publications

(2 citation statements)

References 31 publications

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“…We notice that other studies on a time-dependent SIR model have been recently made [ 5 ]. Yet, the approach elaborated is different than what proposed in this work.…”

Section: Sir-t: a Time-dependent Sir Modelmentioning

confidence: 99%

Describing the COVID-19 outbreak during the lockdown: fitting modified SIR models to data

Ianni

Rossi

2020

Eur. Phys. J. Plus

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In this paper, we analyse the COVID-19 outbreak data with simple modifications of the SIR compartmental model, in order to understand the time evolution of the cases in Italy and Germany, during the first half of 2020. Even if the complexity of the pandemic cannot be easily described, we show that our models are suitable for understanding the data during the application of the social distancing and the lockdown. We compare and contrast different modifications of the SIR model showing the strengths and the weaknesses of each approach. Finally, we discuss the reliability of the model predictions for estimating the near- and far-future evolution of the outbreak.

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“…We notice that other studies on a time-dependent SIR model have been recently made [ 5 ]. Yet, the approach elaborated is different than what proposed in this work.…”

Section: Sir-t: a Time-dependent Sir Modelmentioning

confidence: 99%

Describing the COVID-19 outbreak during the lockdown: fitting modified SIR models to data

Ianni

Rossi

2020

Eur. Phys. J. Plus

View full text Add to dashboard Cite

show abstract

“…Scholars have obtained many results after long-term research on StBV. Some of these results have been obtained using an analytical model of StBV [8][9][10][11][12][13][14], and others are related to new structures [15][16][17][18][19][20][21][22][23][24][25][26][27], in some of which StBV can reach more than 1000 V [25][26][27]. However, when a device is turned off rapidly, there is insufficient time for an electron inversion layer to form under the BOX, which can induce a DD effect in the Micromachines 2023, 14, 887 2 of 14 substrate.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer

et al. 2023

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In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX). Device simulation software MEDICI 0.13.2 was used to investigate the electrical characteristics of the new devices. When the device was turned off, the SPBL could enhance the reduced surface field (RESURF) effect and modulate the lateral electric field in the drift region to ensure that the surface electric field was evenly distributed, thus increasing the lateral breakdown voltage (BVlat). The enhancement of the RESURF effect while maintaining a high doping concentration in the drift region (Nd) in the SPBL SOI LDMOS resulted in a reduction in the substrate doping concentration (Psub) and an expansion of the substrate depletion layer. Therefore, the SPBL both improved the vertical breakdown voltage (BVver) and suppressed an increase in the specific on-resistance (Ron,sp). The results of simulations showed a 14.46% higher TrBV and a 46.25% lower Ron,sp for the SPBL SOI LDMOS compared to those of the SOI LDMOS. As the SPBL optimized the vertical electric field at the drain, the turn-off non-breakdown time (Tnonbv) of the SPBL SOI LDMOS was 65.64% longer than that of the SOI LDMOS. The SPBL SOI LDMOS also demonstrated that TrBV was 10% higher, Ron,sp was 37.74% lower, and Tnonbv was 10% longer than those of the double RESURF SOI LDMOS.

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Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage

Yang

Cao

et al. 2020

IEEE Access

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With two-dimensional device simulation software, the influence of the deep depletion (DD) of the silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) device substrate on the transient breakdown voltage (TrBV) was analyzed. Based on the changes in the characteristics of the charge distribution and the depletion layer in the device substrate with time and the related parameters in the off state, the mechanism of their action on the transverse and vertical breakdown voltages (BVs) was studied. TrBV demonstrates completely different characteristics from the static breakdown voltage (StBV) due to the DD effect of SOI LDMOSs. Low drift region concentration (Nd) and substrate doping concentration (Psub) are conducive to obtaining a high maximum TrBV. With increasing drain voltage (Vd), the turn-off nonbreakdown time (Tnonbv) of the device with higher Psub decreases faster. However, the Tnonbv with higher Psub is higher at low Vd. Therefore, the maximum Tnonbv can be obtained by optimizing Nd and Psub under a given Vd. In addition, Tnonbv is greatly reduced with increasing temperature.INDEX TERMS Silicon-on-insulator (SOI), MOS devices, deep depletion (DD), breakdown voltage (BV).

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Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance

Cited by 4 publications

References 31 publications

Describing the COVID-19 outbreak during the lockdown: fitting modified SIR models to data

Describing the COVID-19 outbreak during the lockdown: fitting modified SIR models to data

Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer

Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage

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