Abstract:A high voltage silicon-on-insulator (SOI) LDMOS with an accumulated charges layer (ACL) for double enhanced dielectric electric field (DEDF) is proposed. The electrons and holes can be accumulated in the ACL with a back-gate bias in off-state. These charges can enhance the dielectric field in the buried oxide (BOX) layer under the source and drain for improving breakdown voltage (BV). Moreover, the ACL can also enhance the reduced surface field (RESURF) effect. Compared with the conventional SOI and Shield-Trench SOI, BV of the DEDF SOI can achieve 1163 V at 1 μm BOX and 550 V back-gate voltage.
A controllable injection diode (CID) is proposed for reducing switching loss and a novel controllable carrier-injection mechanism (CCIM) is investigated in the new device. The CCIM reveals that due to the limit carrier lifetime, the carrier-injection can be controlled in one narrow-pulse time. Based on the CCIM, the CID takes advantage of a PiN diode and a junction field-effect transistor (JFET) for modulating the forward voltage drop. The simulation results show that the forward voltage drop can be modulated to 0.54 V at minimum by the carrier-injection enhancement at 45 A/cm 2 . On the other hand, the JFET weakens carrier-storage effect in the i-layer and the reverse recovery time of the CID is about 0.27 µs at rectifying 50 kHz, which is sufficiently faster than 1.1 µs of the conventional diode. Therefore, the switch loss of the CID can be decreased in a DC-DC buck converter.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.