A novel controllable carrier-injection mechanism in high voltage diode for reducing switching loss

Abstract

A controllable injection diode (CID) is proposed for reducing switching loss and a novel controllable carrier-injection mechanism (CCIM) is investigated in the new device. The CCIM reveals that due to the limit carrier lifetime, the carrier-injection can be controlled in one narrow-pulse time. Based on the CCIM, the CID takes advantage of a PiN diode and a junction field-effect transistor (JFET) for modulating the forward voltage drop. The simulation results show that the forward voltage drop can be modulated to 0.54 V at minimum by the carrier-injection enhancement at 45 A/cm 2 . On the other hand, the JFET weakens carrier-storage effect in the i-layer and the reverse recovery time of the CID is about 0.27 µs at rectifying 50 kHz, which is sufficiently faster than 1.1 µs of the conventional diode. Therefore, the switch loss of the CID can be decreased in a DC-DC buck converter.