Potential of Utilizing High-$k$  Film to Improve the Cost Performance of Trench LDMOS

Cheng, Junji; Chen, Weizhen; Lin, Jingjie; Li, Ping; Yi, Bo; Huang, Haimeng; Chen, Xing Bi

doi:10.1109/ted.2019.2913780

Cited by 14 publications

(11 citation statements)

References 24 publications

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“…At the interface between the HK-film and the N-drift region, it is easy to form the trapped charges during the fabrication process, affecting the device performances [14], [22]. Fig.…”

Section: Device Performance and Simulation Resultsmentioning

confidence: 99%

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Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

Chen

Cheng

2020

IEEE J. Electron Devices Soc.

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A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating the tail current and reducing the turn-off loss. According to the simulation results, with a relative permittivity of 475 and a 400 nm thickness for the HKF, the proposed device obtains a 62% reduction in the turn-off loss compared to a conventional field stop IGBT at the same on-state voltage and breakdown voltage. Moreover, compared to an IGBT using a trench filled with HK dielectric, the proposed device is more feasible to be fabricated and has a lower gate-to-anode capacitance, which can reduce the current and voltage oscillations during the turn-off transient.

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“…At the interface between the HK-film and the N-drift region, it is easy to form the trapped charges during the fabrication process, affecting the device performances [14], [22]. Fig.…”

Section: Device Performance and Simulation Resultsmentioning

confidence: 99%

“…In this paper, a high-k dielectric film (HKF) is used in the IGBT with a deep trench. The other part of the deep trench is filled with SiO2 [14].…”

Section: Introductionmentioning

confidence: 99%

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

Chen

Cheng

2020

IEEE J. Electron Devices Soc.

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“…4(b), the silicon etching will bring about some defects on the side wall of the fins. The defects will introduce some charges at the interface between HK and silicon, which makes the performance unsteady [28], [29]. We need look up some techniques, such as [30], to eliminate the defects as far as possible.…”

Section: Process and Feasibilitymentioning

confidence: 99%

“…Therefore, a variety of techniques have been reported to reduce the specific on-resistance (R ON ,SP ) at a given breakdown voltage (BV). For example, the techniques of reduced-surface-field (RESURF) [2], [3], lateral super-junction [4]- [6], deep trench [7], [8], [28], accumulation layer [9]- [11], optimum variation lateral doping [12], [13], dual paths [14], and high-k (HK).…”

Section: Introductionmentioning

confidence: 99%

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Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance

et al. 2020

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A novel lateral power fin metal-oxide-semiconductor field-effect transistor (MOSFET) made on a silicon-on-insulator substrate is proposed. The fin silicon drift region of the proposed device is surrounded by a high-k (HK) passivation. The HK passivation enables the proposed device to realize a three-dimensional (3D) enhanced reduced-surface-field action and a 3D accumulation layer. According to the simulation results, when compared to a lateral power planar MOSFET with an HK passivation, the proposed device offers a 78% reduction in specific on-resistance at the same 100-V breakdown voltage. More comparative studies indicate that the static characteristic of the proposed device not only overcomes the silicon limit but also presents a significant advantage when compared to the prior art. INDEX TERMS Lateral power MOSFET, fin MOSFET, high-k (HK), silicon-on-insulator (SOI), reducedsurface-field (RESURF), accumulation layer, specific on-resistance (R ON ,SP), breakdown voltage (BV).

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Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric

et al. 2022

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Potential of Utilizing High-$k$ Film to Improve the Cost Performance of Trench LDMOS

Cited by 14 publications

References 24 publications

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance

Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric

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Potential of Utilizing High-$k$ Film to Improve the Cost Performance of Trench LDMOS

Cited by 14 publications

References 24 publications

Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film

Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film

Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance

Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric

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Product

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Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film